Datasheet > AUIRLR2703TRR

AUIRLR2703TRR

更新时间： 2024-01-18 17:28:28

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	276K
描述
Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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AUIRLR2703TRR 数据手册

PD - 97620

AUTOMOTIVEGRADE

AUIRLR2703

HEXFET^®Power MOSFET

• AdvancedPlanarTechnology

• Logic-LevelGateDrive

• LowOn-Resistance

• Dynamic dV/dT Rating

• 175°COperatingTemperature

• Fast Switching

V_(BR)DSS

30V

45m

R_DS(on)max.

Ω

I_{D (Silicon Limited)}

I_{D (Package Limited)}

23A

20A

• Fully Avalanche Rated

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free,RoHSCompliant

• AutomotiveQualified*

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

D-Pak

AUIRLR2703

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 100°C

@ T = 25°C

@T = 25°C Power Dissipation

W/°C

0.30

± 16

Linear Derating Factor

Gate-to-Source Voltage

E_AS

200

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

E_AR

4.5

5.0

Repetitive Avalanche Energy

Peak Diode Recovery

dv/dt

V/ns

-55 to + 175

Operating Junction and

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

3.3

Units

R_θJC

R_θJA

Junction-to-Case

–––

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

01/11/2011

12 3 4 5 6 7...12

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AUIRLR2703TRR 替代型号

型号	品牌	替代类型	描述	数据表
AUIRLR2703TR	INFINEON	完全替代	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR2703TRL	INFINEON	完全替代	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met

与AUIRLR2703TRR相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR2905	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLR2905TR	INFINEON	获取价格	Advanced Planar Technology
AUIRLR2905TRL	INFINEON	获取价格	Advanced Planar Technology
AUIRLR2905TRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLR2905Z	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTRL	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTRR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2908	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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