Datasheet > AUIRLR2703

AUIRLR2703

更新时间： 2024-02-13 19:28:34

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	437K
描述
Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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技术参数
数据手册
替代型号

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AUIRLR2703 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	DPAK-3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	16 weeks
风险等级：	5.12	其他特性：	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：	200 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	20 A	最大漏极电流 (ID)：	20 A
最大漏源导通电阻：	0.045 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252AA	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	45 W
最大脉冲漏极电流 (IDM)：	96 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

AUIRLR2703 数据手册

AUTOMOTIVE GRADE

AUIRLR2703

Features

HEXFET^®Power MOSFET

 Advanced Planar Technology

 Logic Level Gate Drive

 Low On-Resistance

 Dynamic dV/dT Rating

 175°C Operating Temperature

 Fast Switching

V_DSS

30V

R_DS(on)

max.

45m

23A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

 Fully Avalanche Rated

20A

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

Description

Specifically designed for Automotive applications, this cellular

design of HEXFET® Power MOSFETs utilizes the latest

processing techniques to achieve low on-resistance per silicon

area. This benefit combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient and

reliable device for use in Automotive and a wide variety of other

applications.

D-Pak

AUIRLR2703

Gate

Drain

Source

Standard Pack

Form

Tube

Base part number

Package Type

Orderable Part Number

Quantity

3000

AUIRLR2703

AUIRLR2703TRL

AUIRLR2703

D-Pak

Tape and Reel Left

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

0.30

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

± 16

E_{AS (tested)}

I_AR

Single Pulse Avalanche Energy (tested Value) 

Avalanche Current 

200

4.5

E_AR

Repetitive Avalanche Energy 

Peak Diode Recovery

dv/dt

T_J

5.0

V/ns

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Thermal Resistance

Symbol

Parameter

Junction-to-Case 

Typ.

–––

Max.

3.3

Units

R_JC

R_JA

Junction-to-Ambient ( PCB Mount) 

Junction-to-Ambient

°C/W

110

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-12-11

12 3 4 5 6 7...10

中文翻译

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AUIRLR2703 替代型号

型号	品牌	替代类型	描述	数据表
AUIRLR2703TRR	INFINEON	完全替代	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRLR2703TRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRLR2703PBF	INFINEON	类似代替	Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met

与AUIRLR2703相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR2703TR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR2703TRL	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR2703TRR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR2905	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLR2905TR	INFINEON	获取价格	Advanced Planar Technology
AUIRLR2905TRL	INFINEON	获取价格	Advanced Planar Technology
AUIRLR2905TRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLR2905Z	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTRL	INFINEON	获取价格	Specifically designed for Automotive applications

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