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AUIRLR024ZTR

更新时间： 2024-02-08 10:50:50
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
14页 260K
描述
Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

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AUIRLR024ZTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：unknown
风险等级：5.16其他特性：AVALANCHE RATED, ULTRA LOW RESISTANCE
雪崩能效等级（Eas）：25 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：16 A最大漏极电流 (ID)：16 A
最大漏源导通电阻：0.058 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：35 W最大脉冲漏极电流 (IDM)：64 A
参考标准：AEC-Q101子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRLR024ZTR 数据手册

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PD - 97753  
AUTOMOTIVE GRADE  
AUIRLR024Z  
AUIRLU024Z  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
●
●
●
Logic Level  
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
D
V(BR)DSS  
55V  
RDS(on) typ.  
46m  
58m  
G
max.  
S
ID  
16A  
Automotive Qualified *  
D
Description  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive ava-  
lanche rating . These features combine to make this  
design an extremely efficient and reliable device for  
use in Automotive applications and a wide variety of  
other applications.  
S
S
D
G
G
D-Pak  
AUIRLRU024Z  
I-Pak  
AUIRLU024Z  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
Units  
I
I
I
@ T = 25°C  
C
D
D
16  
11  
64  
@ T = 100°C  
C
A
DM  
P
@T = 25°C Power Dissipation  
C
35  
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.23  
W/°C  
V
GS  
± 16  
V
EAS  
AS (tested )  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
25  
mJ  
E
25  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
T
J
Operating Junction and  
-55 to + 175  
300  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
4.28  
40  
Units  
RJC  
RJA  
RJA  
Junction-to-Case  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
01/16/12  
1234567...14

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