Datasheet > AUIRLR024ZTR

AUIRLR024ZTR

更新时间： 2024-11-24 19:16:03

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
14页	260K
描述
Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

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AUIRLR024ZTR 数据手册

PD - 97753

AUTOMOTIVE GRADE

AUIRLR024Z

AUIRLU024Z

HEXFET^®Power MOSFET

Features

●

Logic Level

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

V_(BR)DSS

55V

R_DS(on)typ.

46m

58m



max.

I_D

16A

Automotive Qualified *

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive ava-

lanche rating . These features combine to make this

design an extremely efficient and reliable device for

use in Automotive applications and a wide variety of

other applications.

D-Pak

AUIRLRU024Z

I-Pak

AUIRLU024Z

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

@ T = 25°C

@ T = 100°C

@T = 25°C Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

0.23

W/°C

± 16

E_AS

_AS(tested )

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

300

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

4.28

Units

R_JC

R_JA

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

01/16/12

12 3 4 5 6 7...14

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与AUIRLR024ZTR相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR024ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR024ZTRR	INFINEON	获取价格	暂无描述
AUIRLR120N	INFINEON	获取价格	HEXFET Power MOSFET
AUIRLR120NTR	INFINEON	获取价格	HEXFET Power MOSFET
AUIRLR120NTRL	INFINEON	获取价格	HEXFET Power MOSFET
AUIRLR120NTRR	INFINEON	获取价格	HEXFET Power MOSFET
AUIRLR2703	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR2703TR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR2703TRL	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR2703TRR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met

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