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AUIRLR024NTRL

更新时间： 2024-09-29 12:27:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 328K
描述
Advanced Planar Technology Low On-Resistance Fully Avalanche Rated

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中文翻译

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AUIRLR024NTRL 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.66
其他特性：AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE雪崩能效等级（Eas）：68 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：17 A
最大漏极电流 (ID)：17 A最大漏源导通电阻：0.08 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：45 W最大脉冲漏极电流 (IDM)：72 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRLR024NTRL 数据手册

 浏览型号AUIRLR024NTRL的Datasheet PDF文件第2页浏览型号AUIRLR024NTRL的Datasheet PDF文件第3页浏览型号AUIRLR024NTRL的Datasheet PDF文件第4页浏览型号AUIRLR024NTRL的Datasheet PDF文件第5页浏览型号AUIRLR024NTRL的Datasheet PDF文件第6页浏览型号AUIRLR024NTRL的Datasheet PDF文件第7页 
PD-96348  
AUTOMOTIVE GRADE  
AUIRLR024N  
AUIRLU024N  
Features  
HEXFET® Power MOSFET  
Advanced Planar Technology  
Low On-Resistance  
D
S
Logic-Level Gate Drive  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
V(BR)DSS  
55V  
RDS(on) max.  
ID  
0.065  
17A  
Ω
G
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
D
Description  
S
Specifically designed for Automotive applications, this  
Cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistance per silicon area. This benefit combined with  
the fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliabledeviceforuseinAutomotiveandawidevarietyof  
other applications.  
S
D
G
D
G
I-Pak  
D-Pak  
AUIRLR024N  
AUIRLU024N  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
17  
Units  
I
I
I
@ T = 25°C  
C
D
D
12  
A
@ T = 100°C  
C
72  
DM  
45  
Power Dissipation  
W
W/°C  
V
P
@T = 25°C  
C
D
0.3  
Linear Derating Factor  
± 16  
Gate-to-Source Voltage  
V
GS  
EAS  
IAR  
68  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
11  
4.5  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
5.0  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
STG  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
3.3  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
50  
°C/W  
**  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
01/18/11  
1234567...13

中文翻译

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AUIRLR024NTRL 替代型号

型号 品牌 替代类型 描述 数据表
IRLR024NTRPBF INFINEON

完全替代

 Advanced Process Technology
AUIRLR024N INFINEON

完全替代

 Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
IRLR024NPBF INFINEON

完全替代

 HEXFET Power MOSFET

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