IRLR024NPBF

更新时间： 2024-11-24 21:53:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
10页	305K
描述
HEXFET Power MOSFET

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中文翻译

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技术参数
数据手册
替代型号

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IRLR024NPBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	20 weeks
风险等级：	6.84	Is Samacsys：	N
Base Number Matches：	1

IRLR024NPBF 数据手册

PD- 95081A

IRLR024NPbF

IRLU024NPbF

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Surface Mount (IRLR024N)

l Straight Lead (IRLU024N)

l Advanced Process Technology

l Fast Switching

V_DSS= 55V

_DS(on)= 0.065Ω

l Fully Avalanche Rated

l Lead-Free

I_D= 17A

Description

Fifth Generation HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the lowest possible on-

resistance per silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient device for use in

a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

D-Pak

I-Pak

IRLR024NPbF IRLU024NPbF

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

PowerDissipation

W/°C

LinearDeratingFactor

0.3

V_GS

E_AS

I_AR

Gate-to-SourceVoltage

± 16

Single Pulse Avalanche Energy

AvalancheCurrent

4.5

E_AR

dv/dt

T_J

RepetitiveAvalancheEnergy

Peak Diode Recovery dv/dt

OperatingJunctionand

V/ns

5.0

-55 to + 175

T_STG

StorageTemperatureRange

SolderingTemperature, for10seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.3

Units

R_θJC

R_θJA

Case-to-Ambient(PCBmount)**

Junction-to-Ambient

–––

°C/W

–––

110

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

12/6/04

12 3 4 5 6 7...10

中文翻译

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IRLR024NPBF 替代型号

型号	品牌	替代类型	描述	数据表
AUIRLR024NTRR	INFINEON	完全替代	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLR024NTRL	INFINEON	完全替代	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
IRLR024NTRPBF	INFINEON	类似代替	Advanced Process Technology

与IRLR024NPBF相关器件

型号	品牌	获取价格	描述	数据表
IRLR024NTRL	INFINEON	获取价格	Logic-Level Gate Drive
IRLR024NTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Meta
IRLR024NTRPBF	INFINEON	获取价格	Advanced Process Technology
IRLR024PBF	VISHAY	获取价格	Power MOSFET
IRLR024PBF	INFINEON	获取价格	HEXFET POWER MOSFET
IRLR024TR	VISHAY	获取价格	Power MOSFET
IRLR024TR	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLR024TRL	VISHAY	获取价格	Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK T/R
IRLR024TRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRLR024TRPBF	VISHAY	获取价格	Power MOSFET

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