Datasheet > AUIRLR014N

AUIRLR014N

更新时间： 2024-01-23 10:15:12

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	396K
描述
Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

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中文翻译

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技术参数
数据手册
替代型号

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AUIRLR014N 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.14	配置：	Single
最大漏极电流 (Abs) (ID)：	10 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	28 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

AUIRLR014N 数据手册

AUTOMOTIVE GRADE

AUIRLR014N

Features

HEXFET^®Power MOSFET

 Advanced Planar Technology

 Logic Level Gate Drive

 Low On-Resistance

 Dynamic dV/dT Rating

 175°C Operating Temperature

 Fast Switching

V_DSS

R_DS(on)

I_D

55V

max.

0.14

 Fully Avalanche Rated

10A

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

Description

Specifically designed for Automotive applications, this cellular

design of HEXFET® Power MOSFETs utilizes the latest

processing techniques to achieve low on-resistance per silicon

area. This benefit combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient and

reliable device for use in Automotive and a wide variety of other

applications.

D-Pak

AUIRLR014N

Gate

Drain

Source

Standard Pack

Form

Tube

Base part number

Package Type

Orderable Part Number

Quantity

3000

AUIRLR014N

AUIRLR014NTRL

AUIRLR014N

D-Pak

Tape and Reel Left

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

7.1

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.2

W/°C

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

± 16

I_AR

Avalanche Current 

6.0

2.8

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery

V/ns

5.0

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

°C

300

Thermal Resistance

Symbol

Parameter

Junction-to-Case 

Typ.

–––

Max.

5.3

Units

R_JC

R_JA

Junction-to-Ambient ( PCB Mount) 

Junction-to-Ambient

°C/W

110

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-12-11

12 3 4 5 6 7...10

中文翻译

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AUIRLR014N 替代型号

型号	品牌	替代类型	描述	数据表
AUIRLR014NTRL	INFINEON	完全替代	Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
IRLR024NTRPBF	INFINEON	类似代替	Advanced Process Technology
IRLR024NPBF	INFINEON	类似代替	HEXFET Power MOSFET

与AUIRLR014N相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR014NTR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR014NTRL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRLR014NTRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR024N	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLR024NTR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLR024NTRL	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLR024NTRR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLR024Z	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR024ZTR	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR024ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Met

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