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AUIRLL024NTR

更新时间： 2024-02-26 05:22:17
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 377K
描述
Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

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AUIRLL024NTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT PACKAGE-4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：7.54
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：120 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：4.4 A
最大漏极电流 (ID)：3.1 A最大漏源导通电阻：0.065 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-261AA
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.1 W最大脉冲漏极电流 (IDM)：12 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRLL024NTR 数据手册

 浏览型号AUIRLL024NTR的Datasheet PDF文件第2页浏览型号AUIRLL024NTR的Datasheet PDF文件第3页浏览型号AUIRLL024NTR的Datasheet PDF文件第4页浏览型号AUIRLL024NTR的Datasheet PDF文件第5页浏览型号AUIRLL024NTR的Datasheet PDF文件第6页浏览型号AUIRLL024NTR的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRLL024N  
HEXFET® Power MOSFET  
Features  
Advanced Planar Technology  
Low On-Resistance  
Logic Level Gate Drive  
Dynamic dv/dt Rating  
150°C Operating Temperature  
Fast Switching  
VDSS  
RDS(on) max.  
ID  
55V  
0.065  
3.1A  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
D
Description  
Specifically designed for Automotive applications, this Cellular  
design of HEXFET® Power MOSFETs utilizes the latest  
processing techniques to achieve low on-resistance per silicon  
area. This benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs are  
well known for, provides the designer with an extremely efficient  
and reliable device for use in Automotive and a wide variety of  
other applications.  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tape and Reel  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
2500  
AUIRLL024N  
SOT-223  
AUIRLL024NTR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
Continuous Drain Current, VGS @ 10V  
4.4  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V   
Continuous Drain Current, VGS @ 10V   
Pulsed Drain Current   
3.1  
2.5  
12  
A
PD @TA = 25°C  
PD @TA = 25°C  
Maximum Power Dissipation (PCB Mount)   
2.1  
1.0  
8.3  
W
Maximum Power Dissipation (PCB Mount)  
Linear Derating Factor (PCB Mount)   
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 16  
120  
IAR  
Avalanche Current   
3.1  
0.1  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
mJ  
V/ns  
5.0  
-55 to + 150  
°C  
TSTG  
Storage Temperature Range  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
90  
Max.  
120  
Units  
Junction-to-Ambient (PCB Mount, steady state)   
RJA  
RJA  
°C/W  
Junction-to-Ambient (PCB Mount, steady state)   
50  
60  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-10-29  
1234567...9

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AUIRLL024NTR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLL024N INFINEON

类似代替

 Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
IRLL024NTRPBF INFINEON

功能相似

 HEXFET® Power MOSFET
IRLL024NPBF INFINEON

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 HEXFET Power MOSFET

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AUIRLR024N INFINEON

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 		Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
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 		Advanced Planar Technology Low On-Resistance Fully Avalanche Rated

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