Datasheet > AUIRL7766M2TR_15

AUIRL7766M2TR_15

更新时间： 2024-11-10 01:19:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	440K
描述
Automotive DirectFET Power MOSFET

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AUIRL7766M2TR_15 数据手册

AUTOMOTIVE GRADE

AUIRL7766M2TR

Automotive DirectFET^®Power MOSFET 



Advanced Process Technology

Optimized for Automotive DC-DC and

other Heavy Load Applications

Logic Level Gate Drive

Exceptionally Small Footprint and Low Profile

High Power Density

Low Parasitic Parameters

Dual Sided Cooling

175°C Operating Temperature

Repetitive Avalanche Capability for Robustness and Reliability

Lead free, RoHS and Halogen free

V_(BR)DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

Q_{g (typical)}

100V

8.0m

10m

51A



44nC

 Automotive Qualified *

DirectFET^®ISOMETRIC

Applicable DirectFET^®Outline and Substrate Outline 

Description

The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging

technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The

DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or

convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®

package allows dual sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging

platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and performance improvement

specifically in high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing

techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature

and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current

automotive applications.

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

AUIRL7766M2

DirectFET Medium Can

AUIRL7766M2TR

Tape and Reel

4800

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Max.

100

±16

204

62.5

2.5

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_A= 25°C

I_DM

P_D@T_C= 25°C

P_D@T_A= 25°C

E_AS

E_AS(Tested)

Continuous Drain Current, V_GS@ 10V (Silicon Limited) 

Continuous Drain Current, V_GS@ 10V (Silicon Limited) 

Pulsed Drain Current 

Power Dissipation 

Power Dissipation 

Single Pulse Avalanche Energy (Thermally Limited) 

Single Pulse Avalanche Energy 

Avalanche Current 

237

I_AR

See Fig. 16, 17, 18a, 18b

E_AR

T_P

Repetitive Avalanche Energy 

Peak Soldering Temperature

270

°C

T_J

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-12-11

12 3 4 5 6 7...11

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