5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> AUIRL3705Z
AUIRL3705Z PDF预览

AUIRL3705Z

更新时间： 2024-11-09 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
15页 384K
描述
Logic Level Advanced Process Technology

阅读下载

中文翻译

获取价格

AUIRL3705Z 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.13
Is Samacsys：N其他特性：AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：180 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：75 A最大漏极电流 (ID)：75 A
最大漏源导通电阻：0.008 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：130 W
最大脉冲漏极电流 (IDM)：340 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRL3705Z 数据手册

 浏览型号AUIRL3705Z的Datasheet PDF文件第2页浏览型号AUIRL3705Z的Datasheet PDF文件第3页浏览型号AUIRL3705Z的Datasheet PDF文件第4页浏览型号AUIRL3705Z的Datasheet PDF文件第5页浏览型号AUIRL3705Z的Datasheet PDF文件第6页浏览型号AUIRL3705Z的Datasheet PDF文件第7页 
PD - 96345  
AUTOMOTIVE GRADE  
AUIRL3705Z  
AUIRL3705ZS  
AUIRL3705ZL  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
l
Logic Level  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
V(BR)DSS  
55V  
6.5m  
D
RDS(on) typ.  
Ω
max.  
ID (Silicon Limited)  
ID (Package Limited)  
8.0mΩ  
G
86A  
75A  
S
Description  
Specifically designed for Automotive applications, this HEXFET®  
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve  
extremely low on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide  
variety of other applications.  
D2Pak  
TO-262  
TO-220AB  
AUIRL3705Z  
AUIRL3705ZS AUIRL3705ZL  
G
Gate  
D
Drain  
S
AbsoluteMaximumRatings  
Source  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
I
I
I
I
@ T = 25°C  
C
86  
D
D
D
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 100°C  
C
61  
A
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
@ T = 25°C  
C
75  
340  
DM  
P
@T = 25°C  
Power Dissipation  
130  
W
W/°C  
V
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
0.88  
V
± 16  
GS  
EAS  
Single Pulse Avalanche Energy(Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
120  
180  
mJ  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
T
J
Operating Junction and  
-55 to + 175  
°C  
Storage Temperature Range  
T
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
–––  
0.50  
–––  
–––  
1.14  
–––  
62  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
°C/W  
Junction-to-Ambient (PCB Mount)  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
12/09/10  
1234567...15

中文翻译

下载PDF

AUIRL3705Z 替代型号

型号 品牌 替代类型 描述 数据表
IRL3705ZLPBF INFINEON

完全替代

 HEXFET㈢ Power MOSFET
IRL3705Z INFINEON

完全替代

 AUTOMOTIVE MOSFET
IRL3705ZPBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET

与AUIRL3705Z相关器件

型号 品牌 获取价格 描述 数据表
AUIRL3705ZL INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZS INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZSTRL INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZSTRR INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL7732S2 INFINEON

获取价格

 		DirectFETPower MOSFET
AUIRL7732S2TR INFINEON

获取价格

 		Power Field-Effect Transistor, 14A I(D), 40V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me
AUIRL7732S2TR1 INFINEON

获取价格

 		DirectFETPower MOSFET
AUIRL7736M2 INFINEON

获取价格

 		DirectFETPower MOSFET
AUIRL7736M2TR INFINEON

获取价格

 		Power Field-Effect Transistor, 22A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Met
AUIRL7736M2TR1 INFINEON

获取价格

 		DirectFETPower MOSFET

与AUIRL3705Z相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证