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AUIRL3705Z PDF预览

AUIRL3705Z

更新时间： 2024-11-24 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
15页 384K
描述
Logic Level Advanced Process Technology

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AUIRL3705Z 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.13
Is Samacsys：N其他特性：AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：180 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：75 A最大漏极电流 (ID)：75 A
最大漏源导通电阻：0.008 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：130 W
最大脉冲漏极电流 (IDM)：340 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRL3705Z 数据手册

 浏览型号AUIRL3705Z的Datasheet PDF文件第2页浏览型号AUIRL3705Z的Datasheet PDF文件第3页浏览型号AUIRL3705Z的Datasheet PDF文件第4页浏览型号AUIRL3705Z的Datasheet PDF文件第5页浏览型号AUIRL3705Z的Datasheet PDF文件第6页浏览型号AUIRL3705Z的Datasheet PDF文件第7页 
PD - 96345  
AUTOMOTIVE GRADE  
AUIRL3705Z  
AUIRL3705ZS  
AUIRL3705ZL  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
l
Logic Level  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
V(BR)DSS  
55V  
6.5m  
D
RDS(on) typ.  
Ω
max.  
ID (Silicon Limited)  
ID (Package Limited)  
8.0mΩ  
G
86A  
75A  
S
Description  
Specifically designed for Automotive applications, this HEXFET®  
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve  
extremely low on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide  
variety of other applications.  
D2Pak  
TO-262  
TO-220AB  
AUIRL3705Z  
AUIRL3705ZS AUIRL3705ZL  
G
Gate  
D
Drain  
S
AbsoluteMaximumRatings  
Source  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
I
I
I
I
@ T = 25°C  
C
86  
D
D
D
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 100°C  
C
61  
A
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
@ T = 25°C  
C
75  
340  
DM  
P
@T = 25°C  
Power Dissipation  
130  
W
W/°C  
V
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
0.88  
V
± 16  
GS  
EAS  
Single Pulse Avalanche Energy(Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
120  
180  
mJ  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
T
J
Operating Junction and  
-55 to + 175  
°C  
Storage Temperature Range  
T
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
–––  
0.50  
–––  
–––  
1.14  
–––  
62  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
°C/W  
Junction-to-Ambient (PCB Mount)  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
12/09/10  
1234567...15

中文翻译

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AUIRL3705Z 替代型号

型号 品牌 替代类型 描述 数据表
IRL3705ZLPBF INFINEON

完全替代

 HEXFET㈢ Power MOSFET
IRL3705Z INFINEON

完全替代

 AUTOMOTIVE MOSFET
IRL3705ZPBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET

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