Datasheet > AUIRL7766M2

AUIRL7766M2

更新时间： 2024-01-20 08:08:18

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	440K
描述
Advanced Process Technology

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技术参数
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AUIRL7766M2 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	CHIP CARRIER, R-XBCC-N5
针数：	5	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.33
其他特性：	HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE	雪崩能效等级（Eas）：	237 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V	最大漏极电流 (Abs) (ID)：	51 A
最大漏极电流 (ID)：	10 A	最大漏源导通电阻：	0.01 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-XBCC-N5
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	5
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	62.5 W
最大脉冲漏极电流 (IDM)：	204 A	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	MATTE TIN
端子形式：	NO LEAD	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	40	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

AUIRL7766M2 数据手册

AUTOMOTIVE GRADE

AUIRL7766M2TR

Automotive DirectFET^®Power MOSFET 



Advanced Process Technology

Optimized for Automotive DC-DC and

other Heavy Load Applications

Logic Level Gate Drive

Exceptionally Small Footprint and Low Profile

High Power Density

Low Parasitic Parameters

Dual Sided Cooling

175°C Operating Temperature

Repetitive Avalanche Capability for Robustness and Reliability

Lead free, RoHS and Halogen free

V_(BR)DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

Q_{g (typical)}

100V

8.0m

10m

51A



44nC

 Automotive Qualified *

DirectFET^®ISOMETRIC

Applicable DirectFET^®Outline and Substrate Outline 

Description

The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging

technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The

DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or

convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®

package allows dual sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging

platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and performance improvement

specifically in high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing

techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature

and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current

automotive applications.

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

AUIRL7766M2

DirectFET Medium Can

AUIRL7766M2TR

Tape and Reel

4800

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Max.

100

±16

204

62.5

2.5

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_A= 25°C

I_DM

P_D@T_C= 25°C

P_D@T_A= 25°C

E_AS

E_AS(Tested)

Continuous Drain Current, V_GS@ 10V (Silicon Limited) 

Continuous Drain Current, V_GS@ 10V (Silicon Limited) 

Pulsed Drain Current 

Power Dissipation 

Power Dissipation 

Single Pulse Avalanche Energy (Thermally Limited) 

Single Pulse Avalanche Energy 

Avalanche Current 

237

I_AR

See Fig. 16, 17, 18a, 18b

E_AR

T_P

Repetitive Avalanche Energy 

Peak Soldering Temperature

270

°C

T_J

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-12-11

12 3 4 5 6 7...11

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与AUIRL7766M2相关器件

型号	品牌	获取价格	描述	数据表
AUIRL7766M2TR	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Met
AUIRL7766M2TR_15	INFINEON	获取价格	Automotive DirectFET Power MOSFET
AUIRLI2505	INFINEON	获取价格	Power Field-Effect Transistor, 58A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLL014N	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRLL014NTR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRLL024N	INFINEON	获取价格	Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
AUIRLL024NTR	INFINEON	获取价格	Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
AUIRLL024Z	INFINEON	获取价格	Advanced Process Technology
AUIRLL024ZTR	INFINEON	获取价格	Advanced Process Technology
AUIRLL2705	INFINEON	获取价格	Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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