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AUIRL7732S2 PDF预览

AUIRL7732S2

更新时间： 2024-02-25 16:19:24
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 221K
描述
DirectFETPower MOSFET

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中文翻译

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AUIRL7732S2 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.15其他特性：HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：124 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：58 A最大漏极电流 (ID)：14 A
最大漏源导通电阻：0.0066 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：41 W
最大脉冲漏极电流 (IDM)：230 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRL7732S2 数据手册

 浏览型号AUIRL7732S2的Datasheet PDF文件第2页浏览型号AUIRL7732S2的Datasheet PDF文件第3页浏览型号AUIRL7732S2的Datasheet PDF文件第4页浏览型号AUIRL7732S2的Datasheet PDF文件第5页浏览型号AUIRL7732S2的Datasheet PDF文件第6页浏览型号AUIRL7732S2的Datasheet PDF文件第7页 
PD - 97635A  
AUTOMOTIVE GRADE  
AUIRL7732S2TR  
AUIRL7732S2TR1  
DirectFET® Power MOSFET ‚  
• Logic Level  
V(BR)DSS  
40V  
• Advanced Process Technology  
• Optimized for Automotive DC-DC, Motor Drive and  
other Heavy Load Applications  
• Exceptionally Small Footprint and Low Profile  
• High Power Density  
• Low Parasitic Parameters  
• Dual Sided Cooling  
RDS(on) typ.  
5.0m  
6.6m  
58A  
Ω
Ω
max.  
ID (Silicon Limited)  
Qg  
22nC  
• 175°C Operating Temperature  
• Repetitive Avalanche Capability for Robustness and  
Reliability  
S
D
D
G
S
• Lead free, RoHS and Halogen free  
DirectFET™ ISOMETRIC  
SC  
L4  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L6  
L8  
Description  
The AUIRL7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve  
low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile.  
The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-  
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®  
package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the AUIRL7732S2 to offer substantial system level savings and performance improvement  
specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7732S2 can be utilized  
together with the AUIRL7736M2 as a control/sync MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques  
to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction temperature and high  
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive  
applications.  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
40  
± 16  
Parameter  
Units  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
DS  
GS  
V
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
58  
41  
14  
230  
I
I
I
I
@ T = 25°C  
C
@ T = 100°C  
C
@ TA = 25°C  
D
D
D
A
DM  
41  
2.2  
46  
124  
P
P
@TC = 25°C  
@TA = 25°C  
Power Dissipation  
Power Dissipation  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
D
W
D
EAS  
mJ  
EAS (tested)  
IAR  
See Fig. 18a,18b,16,17  
A
EAR  
Repetitive Avalanche Energy  
mJ  
260  
-55 to + 175  
Peak Soldering Temperature  
Operating Junction and  
Storage Temperature Range  
T
T
T
P
°C  
J
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
67  
–––  
–––  
3.7  
Units  
°C/W  
W/°C  
RθJA  
RθJA  
RθJA  
RθJCan  
RθJ-PCB  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
12.5  
20  
–––  
1.0  
Junction-to-PCB Mounted  
Linear Derating Factor  
–––  
0.27  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
04/07/11  
1234567...11

中文翻译

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