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AUIRL7736M2TR PDF预览

AUIRL7736M2TR

更新时间： 2024-02-10 00:40:51
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 424K
描述
Power Field-Effect Transistor, 22A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5

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AUIRL7736M2TR 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.17Is Samacsys：N
其他特性：HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE雪崩能效等级（Eas）：119 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：112 A
最大漏极电流 (ID)：22 A最大漏源导通电阻：0.003 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N5
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：63 W最大脉冲漏极电流 (IDM)：450 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRL7736M2TR 数据手册

 浏览型号AUIRL7736M2TR的Datasheet PDF文件第2页浏览型号AUIRL7736M2TR的Datasheet PDF文件第3页浏览型号AUIRL7736M2TR的Datasheet PDF文件第4页浏览型号AUIRL7736M2TR的Datasheet PDF文件第5页浏览型号AUIRL7736M2TR的Datasheet PDF文件第6页浏览型号AUIRL7736M2TR的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRL7736M2TR  
Automotive DirectFET® Power MOSFET  
Logic Level  
Advanced Process Technology  
Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
Exceptionally Small Footprint and Low Profile  
High Power Density  
Low Parasitic Parameters  
Dual Sided Cooling  
175°C Operating Temperature  
Repetitive Avalanche Capability for Robustness and Reliability  
Lead free, RoHS and Halogen free  
V(BR)DSS  
40V  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
Qg (typical)  
2.2m  
3.0m  
112A  
52nC  
S
S
S
G
D
D
S
 Automotive Qualified *  
DirectFET® ISOMETRIC  
Applicable DirectFET® Outline and Substrate Outline   
M4  
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging  
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The  
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or  
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®  
package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
his HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the AUIRL7736M2 to offer substantial system level savings and performance improvement  
specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7736M2 can be utilized  
together with the AUIRL7732S2 as a sync/control MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques  
to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high  
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current  
automotive applications.  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
Form  
Quantity  
AUIRL7736M2  
DirectFET Medium Can  
AUIRL7736M2TR  
Tape and Reel  
4800  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
40  
±16  
112  
79  
179  
22  
450  
63  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
ID @ TA= 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Continuous Drain Current, VGS @ 10V (Package Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Pulsed Drain Current   
A
IDM  
PD @TC = 25°C  
PD @TA = 25°C  
EAS  
EAS (Tested)  
Power Dissipation   
Power Dissipation   
W
2.5  
68  
119  
Single Pulse Avalanche Energy (Thermally Limited)   
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
A
mJ  
IAR  
See Fig. 16, 17, 18a, 18b  
EAR  
TP  
Repetitive Avalanche Energy   
Peak Soldering Temperature  
260  
°C  
TJ  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-10-29  
1234567...11

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