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AUIRL7736M2 PDF预览

AUIRL7736M2

更新时间： 2024-02-22 14:19:05
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 235K
描述
DirectFETPower MOSFET

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中文翻译

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AUIRL7736M2 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.17Is Samacsys：N
其他特性：HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE雪崩能效等级（Eas）：119 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：112 A
最大漏极电流 (ID)：22 A最大漏源导通电阻：0.003 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N5
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：63 W最大脉冲漏极电流 (IDM)：450 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRL7736M2 数据手册

 浏览型号AUIRL7736M2的Datasheet PDF文件第2页浏览型号AUIRL7736M2的Datasheet PDF文件第3页浏览型号AUIRL7736M2的Datasheet PDF文件第4页浏览型号AUIRL7736M2的Datasheet PDF文件第5页浏览型号AUIRL7736M2的Datasheet PDF文件第6页浏览型号AUIRL7736M2的Datasheet PDF文件第7页 
PD - 97656  
AUTOMOTIVE GRADE  
AUIRL7736M2TR  
AUIRL7736M2TR1  
DirectFET® Power MOSFET ‚  
• Logic Level  
• Advanced Process Technology  
V(BR)DSS  
40V  
• Optimized for Automotive DC-DC, Motor Drive and  
other Heavy Load Applications  
• Exceptionally Small Footprint and Low Profile  
• High Power Density  
RDS(on) typ.  
2.2m  
3.0m  
112A  
52nC  
Ω
Ω
max.  
ID (Silicon Limited)  
Qg  
• Low Parasitic Parameters  
• Dual Sided Cooling  
• 175°C Operating Temperature  
• Repetitive Avalanche Capability for Robustness and  
Reliability  
S
S
S
S
G
• Lead free, RoHS and Halogen free  
D
D
DirectFET® ISOMETRIC  
M4  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging  
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The  
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,  
infra-red or convection soldering techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes.  
The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET®  
packaging platform coupled with the latest silicon technology allows theAUIRL7736M2 to offer substantial system level savings and performance  
improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The  
AUIRL7736M2 can be utilized together with the AUIRL7732S2 as a sync/control MOSFET pair in a buck converter topology. This MOSFET  
utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are  
175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly  
efficient, robust and reliable device for high current automotive applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
40  
± 16  
V
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
DS  
GS  
V
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
112  
79  
179  
22  
I
I
@ T = 25°C  
C
D
@ T = 100°C  
D
C
ID @ TC = 25°C  
I
I
A
@ TA = 25°C  
D
450  
DM  
63  
2.5  
68  
119  
Power Dissipation  
Power Dissipation  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
P
P
@TC = 25°C  
@TA = 25°C  
D
W
D
EAS  
mJ  
EAS (tested)  
IAR  
See Fig. 18a,18b,16,17  
A
EAR  
Repetitive Avalanche Energy  
mJ  
260  
-55 to + 175  
T
T
T
Peak Soldering Temperature  
Operating Junction and  
Storage Temperature Range  
P
°C  
J
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
60  
–––  
–––  
2.4  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
–––  
12.5  
20  
–––  
1.0  
RθJA  
RθJA  
RθJCan  
RθJ-PCB  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
Junction-to-PCB Mounted  
Linear Derating Factor  
–––  
0.42  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
04/07/11  
1234567...11

中文翻译

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