Datasheet > AUIRL1404ZS

AUIRL1404ZS

更新时间： 2024-11-20 14:30:31

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
13页	754K
描述
Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

AUIRL1404ZS 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	ROHS COMPLIANT, PLASTIC, D2PAK-3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	16 weeks
风险等级：	1.4	Is Samacsys：	N
其他特性：	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	雪崩能效等级（Eas）：	490 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	40 V	最大漏极电流 (Abs) (ID)：	180 A
最大漏极电流 (ID)：	160 A	最大漏源导通电阻：	0.0031 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	200 W	最大脉冲漏极电流 (IDM)：	790 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

AUIRL1404ZS 数据手册

AUIRL1404Z

AUIRL1404ZS

AUIRL1404ZL

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

V_DSS

40V



Logic Level

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

R_DS(on)typ.

2.5m

3.1m

180A

160A

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Description

Specifically designed for Automotive applications, this HEXFET® Power

MOSFET utilizes the latest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and improved repetitive

avalanche rating . These features combine to make this design an extremely

efficient and reliable device for use in Automotive applications and a wide

variety of other applications.

D²Pak

TO-220AB

AUIRL1404Z

TO-262

AUIRL1404ZL

AUIRL1404ZS

Gate

Drain

Source

Standard Pack

Form

Tube

Base part number

Package Type

Orderable Part Number

Quantity

AUIRL1404Z

AUIRL1404ZL

TO-220

TO-262

AUIRL1404Z

AUIRL1404ZL

Tube

Tape and Reel Left

800

AUIRL1404ZS

AUIRL1404ZSTRL

AUIRL1404ZS

D²-Pak

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

180

I_D@ T_C= 100°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

130

160

I_DM

Pulsed Drain Current 

Maximum Power Dissipation

Linear Derating Factor

790

200

1.3

P_D@T_C= 25°C

W/°C

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

± 16

190

E_AS(tested)

Single Pulse Avalanche Energy Tested Value 

Avalanche Current 

490

I_AR

See Fig.15,16, 12a, 12b

E_AR

T_J

Repetitive Avalanche Energy 

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

300

10 lbf•in (1.1N•m)

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

–––

Units

R_JC

R_CS

R_JA

Case-to-Sink, Flat, Greased Surface 

Junction-to-Ambient 

0.50

–––

°C/W

Junction-to-Ambient ( PCB Mount, steady state) 

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-10-27

12 3 4 5 6 7...13

中文翻译

下载PDF

AUIRL1404ZS 替代型号

型号	品牌	替代类型	描述	数据表
AUIRL1404ZSTRL	INFINEON	完全替代	Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, M
IRF4104SPBF	INFINEON	类似代替	HEXFET㈢ Power MOSFET
IRL1404ZSPBF	INFINEON	类似代替	AUTOMOTIVE MOSFET HEXFET㈢ Power MOSFET

与AUIRL1404ZS相关器件

型号	品牌	获取价格	描述	数据表
AUIRL1404ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, M
AUIRL1404ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, M
AUIRL2203N	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
AUIRL3705N	INFINEON	获取价格	Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
AUIRL3705Z	INFINEON	获取价格	Logic Level Advanced Process Technology
AUIRL3705ZL	INFINEON	获取价格	Logic Level Advanced Process Technology
AUIRL3705ZS	INFINEON	获取价格	Logic Level Advanced Process Technology
AUIRL3705ZSTRL	INFINEON	获取价格	Logic Level Advanced Process Technology
AUIRL3705ZSTRR	INFINEON	获取价格	Logic Level Advanced Process Technology
AUIRL7732S2	INFINEON	获取价格	DirectFETPower MOSFET

与AUIRL1404ZS相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRL1404ZS

AUIRL1404ZS 技术参数

AUIRL1404ZS 数据手册

AUIRL1404ZS 替代型号

与AUIRL1404ZS相关器件

与AUIRL1404ZS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRL1404ZS

AUIRL1404ZS 技术参数

AUIRL1404ZS 数据手册

AUIRL1404ZS 替代型号

与AUIRL1404ZS相关器件

与AUIRL1404ZS相关文章

您还可以找

您在本页遇到什么问题？