5秒后页面跳转
IRF4104SPBF PDF预览

IRF4104SPBF

更新时间: 2024-02-23 04:43:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 327K
描述
HEXFET㈢ Power MOSFET

IRF4104SPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.14
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):220 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):120 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0055 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):140 W最大脉冲漏极电流 (IDM):470 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF4104SPBF 数据手册

 浏览型号IRF4104SPBF的Datasheet PDF文件第2页浏览型号IRF4104SPBF的Datasheet PDF文件第3页浏览型号IRF4104SPBF的Datasheet PDF文件第4页浏览型号IRF4104SPBF的Datasheet PDF文件第5页浏览型号IRF4104SPBF的Datasheet PDF文件第6页浏览型号IRF4104SPBF的Datasheet PDF文件第7页 
PD - 95468  
IRF4104PbF  
IRF4104SPbF  
IRF4104LPbF  
AUTOMOTIVE MOSFET  
Features  
HEXFET® Power MOSFET  
l
Advanced Process Technology  
l
l
l
l
l
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
D
VDSS = 40V  
RDS(on) = 5.5mΩ  
G
Description  
ID = 75A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processingtechniquestoachieveextremelylowon-  
resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtempera-  
ture, fast switching speed and improved repetitive  
avalanche rating . These features combine to make  
thisdesignanextremelyefficientandreliabledevice  
foruseinAutomotiveapplicationsandawidevariety  
of other applications.  
S
D2Pak  
TO-262  
IRF4104L  
TO-220AB  
IRF4104  
IRF4104S  
Absolute Maximum Ratings  
Parameter  
Max.  
120  
84  
Units  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
A
(Package limited)  
@ T = 25°C  
C
75  
470  
140  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
0.95  
± 20  
W/°C  
V
V
GS  
EAS (Thermally limited)  
120  
220  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.05  
–––  
62  
Units  
°C/W  
Rθ  
JC  
CS  
JA  
JA  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
0.50  
–––  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
www.irf.com  
1
6/30/04  

IRF4104SPBF 替代型号

型号 品牌 替代类型 描述 数据表
AUIRL1404ZS INFINEON

类似代替

Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, M
IRL1404ZSTRLPBF INFINEON

类似代替

Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Me
IRL1404ZSPBF INFINEON

类似代替

AUTOMOTIVE MOSFET HEXFET㈢ Power MOSFET

与IRF4104SPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF4104STRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me
IRF4104STRR INFINEON

获取价格

Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me
IRF4104STRRPBF INFINEON

获取价格

Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me
IRF420 SAMSUNG

获取价格

N-CHANNEL POWER MOSFETS
IRF420 INTERSIL

获取价格

2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs
IRF420 FAIRCHILD

获取价格

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
IRF420 NJSEMI

获取价格

Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) TO-204AA
IRF420-423 FAIRCHILD

获取价格

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
IRF421 SAMSUNG

获取价格

N-CHANNEL POWER MOSFETS
IRF421 INTERSIL

获取价格

2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs