IRF4104SPBF

更新时间： 2024-11-20 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	327K
描述
HEXFET㈢ Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRF4104SPBF 数据手册

PD - 95468

IRF4104PbF

IRF4104SPbF

IRF4104LPbF

AUTOMOTIVE MOSFET

Features

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

V_DSS= 40V

R_DS(on)= 5.5mΩ

Description

I_D= 75A

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processingtechniquestoachieveextremelylowon-

resistance per silicon area. Additional features of

thisdesign area175°Cjunctionoperatingtempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

thisdesignanextremelyefficientandreliabledevice

foruseinAutomotiveapplicationsandawidevariety

of other applications.

D²Pak

TO-262

IRF4104L

TO-220AB

IRF4104

IRF4104S

Absolute Maximum Ratings

Parameter

Max.

120

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

(Package limited)

@ T = 25°C

470

140

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.95

± 20

W/°C

E_{AS (Thermally limited)}

120

220

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

–––

Units

°C/W

R_θ

Junction-to-Case

R_θ

0.50

–––

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount)

www.irf.com

6/30/04

12 3 4 5 6 7...13

中文翻译

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IRF4104SPBF 替代型号

型号	品牌	替代类型	描述	数据表
AUIRL1404ZS	INFINEON	类似代替	Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, M
IRL1404ZSTRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Me
IRL1404ZSPBF	INFINEON	类似代替	AUTOMOTIVE MOSFET HEXFET㈢ Power MOSFET

与IRF4104SPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF4104STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me
IRF4104STRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me
IRF4104STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me
IRF420	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRF420	INTERSIL	获取价格	2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs
IRF420	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
IRF420	NJSEMI	获取价格	Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) TO-204AA
IRF420-423	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
IRF421	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRF421	INTERSIL	获取价格	2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs

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