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AUIRL2203N

更新时间： 2024-01-26 16:47:09
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 231K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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中文翻译

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AUIRL2203N 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：,Reach Compliance Code：unknown
风险等级：5.2配置：Single
最大漏极电流 (Abs) (ID)：75 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高工作温度：175 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：180 W子类别：FET General Purpose Power
表面贴装：NOBase Number Matches：1

AUIRL2203N 数据手册

 浏览型号AUIRL2203N的Datasheet PDF文件第2页浏览型号AUIRL2203N的Datasheet PDF文件第3页浏览型号AUIRL2203N的Datasheet PDF文件第4页浏览型号AUIRL2203N的Datasheet PDF文件第5页浏览型号AUIRL2203N的Datasheet PDF文件第6页浏览型号AUIRL2203N的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRL2203N  
HEXFET® Power MOSFET  
Features  
l Advanced Planar Technology  
D
V(BR)DSS  
30V  
l
Low On-Resistance  
l Logic Level Gate Drive  
l Dynamic dV/dT Rating  
l 175°C Operating Temperature  
RDS(on) max.  
7m  
Ω
G
l
Fast Switching  
ID (Silicon Limited)  
ID (Package Limited)  
116A  
75A  
l Fully Avalanche Rated  
l Repetitive Avalanche Allowed up to Tjmax  
l Lead-Free, RoHS Compliant  
S
D
l
Automotive Qualified *  
Description  
Specifically designed for Automotive applications, this  
stripe planar design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve low  
on-resistancepersiliconarea.Thisbenefitcombinedwith  
the fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for, pro-  
videsthedesignerwithanextremelyefficientandreliable  
device for use in Automotive and a wide variety of other  
applications.  
S
D
G
TO-220AB  
AUIRL2203N  
G
Gate  
D
S
Drain  
Source  
Standard Pack  
Base part number  
AUIRL2203N  
Package Type  
Orderable Part Number  
AUIRL2203N  
Form  
Quantity  
TO-220  
Tube  
50  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.  
These are stress ratings only; and functional operation of the device at these or any other condition beyond those  
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods  
may affect device reliability. The thermal resistance and power dissipation ratings are measured under board  
mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
Max.  
116  
82  
Units  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
A
C
75  
@ T = 25°C  
C
400  
180  
1.2  
±16  
290  
60  
DM  
W
W/°C  
V
Power Dissipation  
P
@T = 25°C  
C
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
EAS  
IAR  
GS  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
18  
Repetitive Avalanche Energy  
mJ  
5.0  
Peak Diode Recovery dv/dt  
V/ns  
T
T
Operating Junction and  
J
-55 to + 175  
Storage Temperature Range  
°C  
STG  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.85  
–––  
Units  
RθJC  
RθCS  
Junction-to-Case  
°C/W  
Case-to-Sink, Flat, Greased Surface  
0.50  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
March 25, 2014  
1234567...11

中文翻译

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AUIRL2203N 替代型号

型号 品牌 替代类型 描述 数据表
IRL2203NPBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET
STP75N3LLH6 STMICROELECTRONICS

功能相似

 N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220
IRL2203N INFINEON

功能相似

 Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=11

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