5秒后页面跳转
捷配首页

Datasheet > AUIRL2203N
AUIRL2203N PDF预览

AUIRL2203N

更新时间： 2024-11-24 14:40:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 231K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

阅读下载

中文翻译

获取价格

AUIRL2203N 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.21配置：Single
最大漏极电流 (Abs) (ID)：75 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高工作温度：175 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：180 W
子类别：FET General Purpose Power表面贴装：NO
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AUIRL2203N 数据手册

 浏览型号AUIRL2203N的Datasheet PDF文件第2页浏览型号AUIRL2203N的Datasheet PDF文件第3页浏览型号AUIRL2203N的Datasheet PDF文件第4页浏览型号AUIRL2203N的Datasheet PDF文件第5页浏览型号AUIRL2203N的Datasheet PDF文件第6页浏览型号AUIRL2203N的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRL2203N  
HEXFET® Power MOSFET  
Features  
l Advanced Planar Technology  
D
V(BR)DSS  
30V  
l
Low On-Resistance  
l Logic Level Gate Drive  
l Dynamic dV/dT Rating  
l 175°C Operating Temperature  
RDS(on) max.  
7m  
Ω
G
l
Fast Switching  
ID (Silicon Limited)  
ID (Package Limited)  
116A  
75A  
l Fully Avalanche Rated  
l Repetitive Avalanche Allowed up to Tjmax  
l Lead-Free, RoHS Compliant  
S
D
l
Automotive Qualified *  
Description  
Specifically designed for Automotive applications, this  
stripe planar design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve low  
on-resistancepersiliconarea.Thisbenefitcombinedwith  
the fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for, pro-  
videsthedesignerwithanextremelyefficientandreliable  
device for use in Automotive and a wide variety of other  
applications.  
S
D
G
TO-220AB  
AUIRL2203N  
G
Gate  
D
S
Drain  
Source  
Standard Pack  
Base part number  
AUIRL2203N  
Package Type  
Orderable Part Number  
AUIRL2203N  
Form  
Quantity  
TO-220  
Tube  
50  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.  
These are stress ratings only; and functional operation of the device at these or any other condition beyond those  
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods  
may affect device reliability. The thermal resistance and power dissipation ratings are measured under board  
mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
Max.  
116  
82  
Units  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
A
C
75  
@ T = 25°C  
C
400  
180  
1.2  
±16  
290  
60  
DM  
W
W/°C  
V
Power Dissipation  
P
@T = 25°C  
C
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
EAS  
IAR  
GS  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
18  
Repetitive Avalanche Energy  
mJ  
5.0  
Peak Diode Recovery dv/dt  
V/ns  
T
T
Operating Junction and  
J
-55 to + 175  
Storage Temperature Range  
°C  
STG  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.85  
–––  
Units  
RθJC  
RθCS  
Junction-to-Case  
°C/W  
Case-to-Sink, Flat, Greased Surface  
0.50  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
March 25, 2014  
1234567...11

中文翻译

下载PDF

AUIRL2203N 替代型号

型号 品牌 替代类型 描述 数据表
IRL2203NPBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET
STP75N3LLH6 STMICROELECTRONICS

功能相似

 N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220
IRL2203N INFINEON

功能相似

 Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=11

与AUIRL2203N相关器件

型号 品牌 获取价格 描述 数据表
AUIRL3705N INFINEON

获取价格

 		Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
AUIRL3705Z INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZL INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZS INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZSTRL INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZSTRR INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL7732S2 INFINEON

获取价格

 		DirectFETPower MOSFET
AUIRL7732S2TR INFINEON

获取价格

 		Power Field-Effect Transistor, 14A I(D), 40V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me
AUIRL7732S2TR1 INFINEON

获取价格

 		DirectFETPower MOSFET
AUIRL7736M2 INFINEON

获取价格

 		DirectFETPower MOSFET

与AUIRL2203N相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证