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AUIRL3705N PDF预览

AUIRL3705N

更新时间： 2024-11-24 14:40:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 1024K
描述
Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AUIRL3705N 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：7.6
其他特性：AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE雪崩能效等级（Eas）：340 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：89 A
最大漏极电流 (ID)：89 A最大漏源导通电阻：0.012 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：250
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：170 W
最大脉冲漏极电流 (IDM)：310 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRL3705N 数据手册

 浏览型号AUIRL3705N的Datasheet PDF文件第2页浏览型号AUIRL3705N的Datasheet PDF文件第3页浏览型号AUIRL3705N的Datasheet PDF文件第4页浏览型号AUIRL3705N的Datasheet PDF文件第5页浏览型号AUIRL3705N的Datasheet PDF文件第6页浏览型号AUIRL3705N的Datasheet PDF文件第7页 
PD - 96352  
AUTOMOTIVE GRADE  
AUIRL3705N  
HEXFET® Power MOSFET  
Features  
AdvancedPlanarTechnology  
Logic-LevelGateDrive  
Dynamic dV/dT Rating  
175°COperatingTemperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
D
S
V(BR)DSS  
55V  
RDS(on) max.  
ID  
0.01  
89A  
Ω
G
Automotive Qualified *  
D
Description  
S
Specifically designed for Automotive applications, this  
Cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistancepersiliconarea.Thisbenefitcombinedwiththe  
fast switching speed and ruggedized device design that  
HEXFET power MOSFETs are well known for, provides  
the designer with an extremely efficient and reliable  
device for use in Automotive and a wide variety of other  
applications.  
D
G
TO-220AB  
AUIRL3705N  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
89  
63  
Units  
I
I
I
@ T = 25°C  
C
D
D
A
@ T = 100°C  
C
310  
DM  
170  
Power Dissipation  
P
D
@T = 25°C  
C
101  
Linear Derating Factor  
W/°C  
V
±16  
Gate-to-Source Voltage  
V
GS  
EAS  
IAR  
340  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
46  
EAR  
dv/dt  
17  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
5.0  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
°C  
STG  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
0.90  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
–––  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
01/19/11  
1234567...11

中文翻译

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AUIRL3705N 替代型号

型号 品牌 替代类型 描述 数据表
IRL3705NPBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET
IRL3705N INFINEON

功能相似

 HEXFET Power MOSFET

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