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AUIRL1404STRR

更新时间： 2024-09-15 21:01:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 250K
描述
Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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AUIRL1404STRR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.1
其他特性：AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE雪崩能效等级（Eas）：520 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：160 A
最大漏极电流 (ID)：160 A最大漏源导通电阻：0.004 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：200 W最大脉冲漏极电流 (IDM)：640 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRL1404STRR 数据手册

 浏览型号AUIRL1404STRR的Datasheet PDF文件第2页浏览型号AUIRL1404STRR的Datasheet PDF文件第3页浏览型号AUIRL1404STRR的Datasheet PDF文件第4页浏览型号AUIRL1404STRR的Datasheet PDF文件第5页浏览型号AUIRL1404STRR的Datasheet PDF文件第6页浏览型号AUIRL1404STRR的Datasheet PDF文件第7页 
PD - 96385A  
AUTOMOTIVE GRADE  
AUIRL1404S  
AUIRL1404L  
Features  
HEXFET® Power MOSFET  
AdvancedPlanarTechnology  
Logic-LevelGateDrive  
LowOn-Resistance  
Dynamic dV/dT Rating  
175°COperatingTemperature  
Fast Switching  
D
S
V(BR)DSS  
40V  
4m  
RDS(on) max.  
ID  
Ω
G
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
160A  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
Description  
Specifically designed for Automotive applications, this  
Stripe Planar design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve low  
on-resistancepersiliconarea.Thisbenefitcombinedwith  
the fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliabledeviceforuseinAutomotiveandawidevarietyof  
otherapplications.  
D2Pak  
AUIRL1404S  
TO-262  
AUIRL1404L  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
160  
Units  
I
I
I
@ T = 25°C  
C
D
D
110  
A
@ T = 100°C  
C
640  
DM  
3.8  
Power Dissipation  
P
D
P
D
@T = 25°C  
A
W
200  
@T = 25°C  
Power Dissipation  
C
1.3  
Linear Derating Factor  
W/°C  
V
±20  
Gate-to-Source Voltage  
V
GS  
EAS  
IAR  
520  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
95  
EAR  
dv/dt  
20  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
5.0  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
STG  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
0.75  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
–––  
0.50  
–––  
°C/W  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient (PCB mounted)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
09/06/11  
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