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AUIRFZ44NSTRL

更新时间： 2024-11-25 12:32:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	279K
描述
AUTOMOTIVE GRADE

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中文翻译

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数据手册
替代型号

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AUIRFZ44NSTRL 数据手册

PD-96391A

AUTOMOTIVE GRADE

AUIRFZ44NS

AUIRFZ44NL

HEXFET^®Power MOSFET

Features

AdvancedPlanarTechnology

LowOn-Resistance

Dynamic dV/dT Rating

175°COperatingTemperature

Fast Switching

V_(BR)DSS

55V

17.5m

49A

R_DS(on)max.

I_D

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

Description

Specifically designed for Automotive applications, this

Stripe Planar design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve low

on-resistance per silicon area. This benefit combined with

the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in Automotive and a wide variety

of other applications.

D²Pak

TO-262

AUIRFZ44NS

AUIRFZ44NL

Gate

Drain

Source

Absolute Maximum Ratings

Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

@ T = 25°C

@ T = 100°C

160

3.8

@T = 25°C

Power Dissipation

@T = 25°C

0.63

±20

Linear Derating Factor

W/°C

Gate-to-Source Voltage

E_{AS (Thermally Limited)}

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

150

E_AS(tested)

530

I_AR

Avalanche Current

E_AR

dv/dt

9.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

STG

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.5

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient

°C/W

–––

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

08/29/11

12 3 4 5 6 7...13

中文翻译

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AUIRFZ44NSTRL 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFZ44NSTRR	INFINEON	类似代替	AUTOMOTIVE GRADE
IRFZ44NSTRLPBF	INFINEON	功能相似	Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Me
IRFZ44NSPBF	INFINEON	功能相似	HEXFET㈢Power MOSFET

与AUIRFZ44NSTRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRFZ44NSTRR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44VZS	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44VZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
AUIRFZ44VZSTRR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44Z	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRFZ44ZS	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRFZ44ZSTRL	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRFZ44ZSTRR	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRFZ46NL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRFZ46NS	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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