5秒后页面跳转
捷配首页

Datasheet > AUIRFZ44VZSTRL
AUIRFZ44VZSTRL PDF预览

AUIRFZ44VZSTRL

更新时间： 2024-01-11 15:05:21
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 645K
描述
Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2

阅读下载

中文翻译

获取价格

AUIRFZ44VZSTRL 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.63
其他特性：ULTRA LOW RESISTANCE雪崩能效等级（Eas）：73 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (ID)：57 A
最大漏源导通电阻：0.012 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：230 A参考标准：AEC-Q101
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFZ44VZSTRL 数据手册

 浏览型号AUIRFZ44VZSTRL的Datasheet PDF文件第2页浏览型号AUIRFZ44VZSTRL的Datasheet PDF文件第3页浏览型号AUIRFZ44VZSTRL的Datasheet PDF文件第4页浏览型号AUIRFZ44VZSTRL的Datasheet PDF文件第5页浏览型号AUIRFZ44VZSTRL的Datasheet PDF文件第6页浏览型号AUIRFZ44VZSTRL的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRFZ44VZS  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
VDSS  
60V  
9.6m  
12m  
57A  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
max.  
ID  
D
Description  
S
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide variety  
of other applications  
G
G
Gate  
D
S
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
50  
800  
AUIRFZ44VZS  
AUIRFZ44VZSTRL  
AUIRFZ44VZS  
D2-Pak  
Tape and Reel Left  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and  
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
57  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
40  
230  
92  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
0.61  
VGS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
73  
EAS (Thermally Limited)  
mJ  
EAS (Tested)  
IAR  
Single Pulse Avalanche Energy (Tested Limited)   
Avalanche Current   
110  
See Fig. 12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy   
mJ  
TJ  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
-55 to + 175  
300  
TSTG  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Junction-to-Case  
Junction-to-Ambient (PCB Mount), D2 Pak   
–––  
1.64  
RJC  
RJA  
°C/W  
–––  
40  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2017-10-13  
1234567...11

中文翻译

下载PDF

与AUIRFZ44VZSTRL相关器件

型号 品牌 获取价格 描述 数据表
AUIRFZ44VZSTRR INFINEON

获取价格

 		AUTOMOTIVE GRADE
AUIRFZ44Z INFINEON

获取价格

 		HEXFET? Power MOSFET
AUIRFZ44ZS INFINEON

获取价格

 		HEXFET? Power MOSFET
AUIRFZ44ZSTRL INFINEON

获取价格

 		HEXFET? Power MOSFET
AUIRFZ44ZSTRR INFINEON

获取价格

 		HEXFET? Power MOSFET
AUIRFZ46NL INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRFZ46NS INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFZ46NSTRL INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFZ46NSTRR INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFZ48N INFINEON

获取价格

 		汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO

与AUIRFZ44VZSTRL相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证