AO8818
DUAL N-CHANNEL ENHANCEMENT MODE FET
FEATURES
Ultra low on-resistance:VDS=30V,ID=7A,RDS(ON)≤18mΩ@VGS=10V
Low gate charge
ESD protected
Surface Mount device
TSSOP-8
MECHANICAL DATA
Case: TSSOP-8
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: not available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Value
30
±12
Unit
V
V
VDS
VGS
TA = 25°C
TA = 70°C
7
A
Continuous drain current
ID
5.5
A
Pulsed drain current
IDM
PD
30
A
TA = 25°C
TA = 70°C
1.5
W
Power dissipation
0.96
120
70
W
Thermal resistance from Junction to ambient
Thermal resistance from Junction to Lead
Junction temperature
Rθ
JA
°C/W
°C/W
°C
°C
Rθ
JL
TJ
TSTG
150
-55 ~+150
Storage temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
V(BR)DSS*
V
GS
D
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-Source Breakdown Voltage
Gate-threshold voltage
30
V =0V, I =250μA
IDSS
IGSS
*
*
1
±10
μA VDS=24V,
VGS=0V
μA VDS=0V,
V
V
VGS=±10V
G
BVGSO
VGS(th)
±12
0.6 0.94
V =0V, I =±250μA
DS
*
1.5
DS
V =V , I =250μA
GS
D
A
On-State Drain Current
ID(ON)
*
30
VDS=5V,
VGS=4.5V
VGS=10V, ID=7A
15
21
17
22
45
0.74
18
25
20
27
mΩ
mΩ
mΩ
mΩ
S
VGS=10V, ID=7A,TJ=125°C
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VDS=5V, ID=7A
Drain-source on-resistance
RDS(ON)*
Forward transconductance
Diode forward voltage
Diode forward current
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
*Pulse test ; Pulse width ≤80µs, Duty cycle ≤ 0.5% .
gFS
VSD
IS
Ciss
Coss
Crss
Rg
1
2.5
V
A
IS=1A, VGS=0V
880 1060
130
90
1.3
11.6
1.9
4.6
8.7
13.7
36
pF
pF
pF
Ω
nC
nC
nC
nS
nS
nS
nS
nS
nC
VDS=15V, VGS=0V, f=1MHz
2
14
VDS=0V, VGS=0V, f=1MHz
VGS=4.5V,VDS=15V,ID=7A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS=5V, VDS=15V,
RGEN=3Ω,RL=2.2Ω
11
16
7.7
trr
Qrr
F
20
I =7A, dI/dt=100A/ s
μ
IF=7A, dI/dt=100A/ s
μ
1 / 5
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