AO8822

更新时间： 2024-10-30 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	117K
描述
Common-Drain Dual N-Channel Enhancement Mode Field

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中文翻译

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技术参数
数据手册

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AO8822 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.69	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.5 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

AO8822 数据手册

AO8822

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Features

The AO8822 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. This device is suitable

for use as a uni-directional or bi-directional load

switch, facilitated by its common-drain configuration.

Standard Product AO8822 is Pb-free (meets ROHS

& Sony 259 specifications). AO8822L is a Green

Product ordering option. AO8822 and AO8822L are

electrically identical.

V_DS(V) = 20V

I_D= 7 A (V_GS= 10V)

R_DS(ON)< 21mΩ (V_GS= 10V)

R_DS(ON)< 24mΩ (V_GS= 4.5V)

R_DS(ON)< 32mΩ (V_GS= 2.5V)

R_DS(ON)< 50mΩ (V_GS= 1.8V)

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

T_A=25°C

T_A=70°C

I_D

5.7

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.5

P_D

Power Dissipation ^A

0.96

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

101

130

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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