Datasheet > AO8830_10

AO8830_10

更新时间： 2024-09-13 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	200K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AO8830_10 数据手册

AO8830

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Features

The AO8830/L uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. This device is suitable

for use as a uni-directional or bi-directional load

switch, facilitated by its common-drain configuration.

AO8830 and AO8830L are electrically identical.

-RoHs Compliant

V_DS(V) = 20V

I_D= 6 A (V_GS= 10V)

R_DS(ON)< 27mΩ (V_GS= 10V)

R_DS(ON)< 30mΩ (V_GS= 4.5V)

R_DS(ON)< 37mΩ (V_GS= 3.1V)

R_DS(ON)< 41mΩ (V_GS= 2.5V)

R_DS(ON)< 55mΩ (V_GS= 1.8V)

-AO8830L is Halogen Free

ESD PROTECTED!

TSSOP8

TSSOP-8

Top View

Bottom View

1.6K

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

T_A=25°C

T_A=70°C

I_D

4.8

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.5

P_D

Power Dissipation ^A

0.94

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

115

140

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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