Datasheet > AO9926C

AO9926C

更新时间： 2024-09-12 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	1184K
描述
20V Dual N-Channel MOSFET

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AO9926C 数据手册

AO9926C

20V Dual N-Channel MOSFET

General Description

The AO9926C uses advanced trench technology to

provide excellent R_DS(ON)

, low gate charge and operation

with gate voltages as low as 1.8V while retaining a 12V

directional or bi-directional load switch.

Features

_GS(MAX)rating. This device is suitable for use as a uni-

V_DS

20V

7.6A

I_D(at V_GS=10V)

< 23mΩ

< 26mΩ

< 34mΩ

< 52mΩ

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

R_DS(ON)(at V_GS=2.5V)

R_DS(ON)(at V_GS=1.8V)

SOIC-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

V_GS

±12

Gate-Source Voltage

T_A=25°C

T_A=70°C

7.6

6.1

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

1/5

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