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AO9926C PDF预览

AO9926C

更新时间: 2024-09-12 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 1151K
描述
20V Dual N-Channel MOSFET

AO9926C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.7配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):7.6 A
最大漏极电流 (ID):7.6 A最大漏源导通电阻:0.023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):105 pF
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AO9926C 数据手册

 浏览型号AO9926C的Datasheet PDF文件第2页浏览型号AO9926C的Datasheet PDF文件第3页浏览型号AO9926C的Datasheet PDF文件第4页浏览型号AO9926C的Datasheet PDF文件第5页 
AO9926C  
20V Dual N-Channel MOSFET  
General Description  
Product Summary  
VDS  
The AO9926C uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and operation  
with gate voltages as low as 1.8V while retaining a 12V  
20V  
7.6A  
ID (at VGS=10V)  
< 23mΩ  
< 26mΩ  
< 34mΩ  
< 52mΩ  
R
DS(ON) (at VGS=10V)  
RDS(ON) (at VGS =4.5V)  
DS(ON) (at VGS=2.5V)  
V
GS(MAX) rating. This device is suitable for use as a uni-  
directional or bi-directional load switch.  
R
RDS(ON) (at VGS=1.8V)  
100% Rg Tested  
SOIC-8  
D1  
D2  
Top View  
Bottom View  
Top View  
1
8
S2  
G2  
S1  
D2  
D2  
D1  
2
3
7
6
4
5
G1  
G2  
D1  
G1  
S1  
S2  
Pin1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
20  
Units  
Drain-Source Voltage  
V
V
VGS  
±12  
Gate-Source Voltage  
TA=25°C  
TA=70°C  
7.6  
6.1  
Continuous Drain  
Current  
Pulsed Drain Current C  
ID  
A
IDM  
38  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation B  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
74  
Steady-State  
Steady-State  
RθJL  
32  
40  
Rev 0: Sep 2010  
www.aosmd.com  
Page 1 of 5  

AO9926C 替代型号

型号 品牌 替代类型 描述 数据表
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完全替代

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