Datasheet > AO8830

AO8830

更新时间： 2024-10-30 12:26:43

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	360K
描述
Dual N-Channel Logical Level MOSFET

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AO8830 数据手册

Freescale

AO8830 /MC8830

Dual N-Channel Logical Level MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(OHM)

I_D(A)

6.8

0.022 @ V_GS= 4.5 V

0.030 @ V_GS= 2.5V

0.047 @ V_GS= 1.8V

5.8

4.7

•

Low r_DS(on)provides higher efficiency and

extends battery life

TSSOP-8

Top View

D₂

D₁

Low thermal impedance copper leadframe

TSSOP-8 saves board space

G₂

G₁

•

Fast switching speed

S₂

N-Channel MOSFET

S₁

N-Channel MOSFET

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±12

T_A=25^oC

T_A=70^oC

6.8

5.4

±30

1.5

1.0

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

I_DM

I_S

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typ

Max

t <= 10 sec

Maximum Junction-to-Ambient^a

Steady State

^oC/W

100

120

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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