Datasheet > AOB11N60L

AOB11N60L

更新时间： 2024-09-12 12:56:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	450K
描述
600V,11A N-Channel MOSFET

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AOB11N60L 数据手册

AOB11N60

600V,11A N-Channel MOSFET

General Description

Product Summary

V_DS

The AOB11N60 has been fabricated using an advanced

high voltage MOSFET process that is designed to deliver

high levels of performance and robustness in popular AC-

DC applications.By providing low R_DS(on), C_issand C_rss

along with guaranteed avalanche capability this device

can be adopted quickly into new and existing offline power

supply designs.

700V@150℃

11A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.7Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOB11N60L

TO-263

D²PAK

AOB11N60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOB11N60

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

8.0

Pulsed Drain Current ^C

I_DM

4.8

345

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

690

272

V/ns

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

2.2

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

R_θJA

AOB11N60

Units

Maximum Junction-to-Ambient ^A,D

°C/W

Maximum Case-to-sink ^A

R_θCS

0.5

0.46

°C/W

Maximum Junction-to-Case

R_θJC

Rev 0: Jan 2012

www.aosmd.com

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