Datasheet > AOA400

AOA400

更新时间： 2024-09-12 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	112K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOA400 数据手册

AOA400

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOA400 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AOA400A400 is Pb-

free (meets ROHS & Sony 259 specifications).

AOA400L is a Green Product ordering option.

AOA400 and AOA400L are electrically identical.

V_DS(V) = 30V

I_D= 2.8 A (V_GS= 10V)

R_DS(ON)< 85mΩ (V_GS= 10V)

R_DS(ON)< 100mΩ (V_GS= 4.5V)

R_DS(ON)< 140mΩ (V_GS= 2.5V)

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

2.8

T_A=25°C

T_A=70°C

I_D

2.3

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.1

P_D

Power Dissipation ^A

0.73

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

110

150

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

115

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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