AOT11S65/AOB11S65/AOTF11S65
650V 11A
α
MOS TM Power Transistor
General Description
fabricated using the advanced αMOSTM high voltage
The AOT11S65 & AOB11S65 & AOTF11S65 have been
process that is designed to deliver high levels of
performance and robustness in switching applications.
guaranteed avalanche capability these parts can be
By providing low RDS(on), Qg and EOSS along with
adopted quickly into new and existing offline power supply
designs.
Features
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
750V
45A
0.399Ω
13.2nC
2.9µJ
Eoss @ 400V
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT11S65/AOB11S65
AOTF11S65
AOTF11S65L
Units
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±30
11*
8*
V
A
TC=25°C
11
8
11*
8*
Continuous Drain
Current
ID
TC=100°C
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
45
2
A
Repetitive avalanche energy C
Single pulsed avalanche energy G
TC=25°C
EAR
EAS
60
120
39
mJ
mJ
W
198
1.6
31
PD
Power Dissipation B
Derate above 25oC
0.31
100
0.25
W/ o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
V/ns
°C
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
°C
Parameter
Symbol
AOT11S65/AOB11S65
AOTF11S65
AOTF11S65L
Units
Maximum Junction-to-Ambient A,D
RθJA
65
65
65
°C/W
Maximum Case-to-sink A
RθCS
RθJC
0.5
--
--
4
°C/W
°C/W
Maximum Junction-to-Case
0.63
3.25
* Drain current limited by maximum junction temperature.
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