是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 2.35 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 10 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AOB1100L | FREESCALE |
获取价格 |
100V N-Channel Rugged Planar MOSFET | |
AOB1100L | AOS |
获取价格 |
100V N-Channel Rugged Planar MOSFET | |
AOB11C60 | AOS |
获取价格 |
Plastic Encapsulated Device | |
AOB11N60 | AOS |
获取价格 |
600V,11A N-Channel MOSFET | |
AOB11N60L | AOS |
获取价格 |
600V,11A N-Channel MOSFET | |
AOB11S60 | AOS |
获取价格 |
600V 11A a MOS Power Transistor | |
AOB11S60L | AOS |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Me | |
AOB11S65 | FREESCALE |
获取价格 |
650V 11A a MOS TM Power Transistor | |
AOB11S65 | AOS |
获取价格 |
650V 11A a MOS Power Transistor | |
AOB11S65L | AOS |
获取价格 |
Transistor |