Datasheet > AO8846

AO8846

更新时间： 2024-10-30 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	206K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO8846 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83
Base Number Matches：	1

AO8846 数据手册

AO8846

Common-Drain Dual N-Channel Enhancement Mode

Field Effect Transistor

General Description

Features

The AO8846 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge. It is ESD

protected. This device is suitable for use as a uni-

directional or bi-directional load switch, facilitated by its

common-drain configuration. Standard Product AO8846

is Pb-free (meets ROHS & Sony 259 specifications).

V_DS= 20V

I_D= 7.0A

(V_GS= 4.5V)

_DS(ON)< 20mΩ (V_GS= 4.5V)

_DS(ON)< 20mΩ (V_GS= 4.0V)

_DS(ON)< 21mΩ (V_GS= 3.1V)

R_DS(ON)< 22mΩ (V_GS= 2.5V)

_DS(ON)< 27mΩ (V_GS= 1.8V)

TSSOP-8

Top View

1.8KΩ

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

10 Sec

Steady State

Units

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

T_A=25°C

T_A=70°C

5.7

4.8

I_D

5.7

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.5

1.0

0.7

Power Dissipation ^A

P_D

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady State

120

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

中文翻译

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