AO9926A

更新时间： 2024-10-29 22:05:43

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	218K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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AO9926A 数据手册

Jan 2003

AO9926A

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO9926A uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. They

offer operation over a wide gate drive range from 1.8V

to 8V. The two devices may be used individually, in

parallel or to form a bidirectional blocking switch.

V_DS(V) = 20V

I_D= 7A

_DS(ON)< 26mΩ (V_GS= 4.5V)

_DS(ON)< 33mΩ (V_GS= 2.5V)

_DS(ON)< 42mΩ (V_GS= 1.8V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A

I_D

I_DM

Pulsed Drain Current ^B

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady-State

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6

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