Datasheet > AO9926B_11

AO9926B_11

更新时间： 2024-11-20 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	252K
描述
20V Dual N-Channel MOSFET

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数据手册

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AO9926B_11 数据手册

AO9926B

20V Dual N-Channel MOSFET

General Description

Product Summary

V_DS

20V

The AO9926B uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 1.8V while retaining a 12V

I_D(at V_GS=10V)

7.6A

_DS(ON)(at V_GS=10V)

< 23mΩ

< 26mΩ

< 34mΩ

< 52mΩ

V_GS(MAX)rating. This device is suitable for use as a uni-

R_DS(ON)(at V_GS=4.5V)

R_DS(ON)(at V_GS=2.5V)

directional or bi-directional load switch.

ꢀ

_DS(ON)(at V_GS=1.8V)

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

7.6

Continuous Drain

Current

I_D

6.1

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

°C

Power Dissipation ^B

1.28

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Rev 3: July 2010

www.aosmd.com

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