AO9926E

更新时间： 2024-11-20 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	249K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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AO9926E 数据手册

AO9926E

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO9926E uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. It is ESD protected. Standard Product

AO9926E is Pb-free (meets ROHS & Sony 259

specifications). AO9926EL is a Green Product

ordering option. AO9926E and AO9926EL are

V_DS(V) = 20V

I_D= 8A (V_GS= 4.5V)

R_DS(ON)< 21mΩ (V_GS= 4.5V)

R_DS(ON)< 25mΩ (V_GS= 2.5V)

R_DS(ON)< 33mΩ (V_GS= 1.8V)

ESD Rating: 2000V HBM

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

T_A=25°C

T_A=70°C

6.4

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

62.5

110

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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