Datasheet > AOB1100L

AOB1100L

更新时间： 2024-09-12 12:51:27

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飞思卡尔 - FREESCALE		/
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6页	419K
描述
100V N-Channel Rugged Planar MOSFET

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AOB1100L 数据手册

AOT1100L/AOB1100L

100V N-Channel Rugged Planar MOSFET

General Description

The AOT1100L/AOB1100L uses a robust technology that

is designed to provide efficient and reliable power

including motor control. With low R_DS(ON)and excellent

current switching and can endure adverse operating

conversion even in the most demanding applications,

thermal capability this device is appropriate for high

conditions.This device is ideal for boost converters and

power supplies and LED backlighting.

synchronous rectifiers for consumer, telecom, industrial

Features

V_DS

100V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

130A

< 12mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

100

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

130

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

208

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS

122

744

500

250

2.1

E_AS

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.22

0.3

1/6

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