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AOB11S65L PDF预览

AOB11S65L

更新时间: 2024-09-12 21:12:11
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
7页 300K
描述
Transistor

AOB11S65L 技术参数

生命周期:Not Recommended包装说明:,
Reach Compliance Code:compliant风险等级:8.17
Base Number Matches:1

AOB11S65L 数据手册

 浏览型号AOB11S65L的Datasheet PDF文件第2页浏览型号AOB11S65L的Datasheet PDF文件第3页浏览型号AOB11S65L的Datasheet PDF文件第4页浏览型号AOB11S65L的Datasheet PDF文件第5页浏览型号AOB11S65L的Datasheet PDF文件第6页浏览型号AOB11S65L的Datasheet PDF文件第7页 
AOT11S65/AOB11S65/AOTF11S65  
650V 11A  
α
MOS TM Power Transistor  
General Description  
Product Summary  
VDS @ Tj,max  
IDM  
RDS(ON),max  
Qg,typ  
750V  
The AOT11S65 & AOB11S65 & AOTF11S65 have been  
fabricated using the advanced αMOSTM high voltage  
process that is designed to deliver high levels of  
performance and robustness in switching applications.  
By providing low RDS(on), Qg and EOSS along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
45A  
0.399Ω  
13.2nC  
2.9µJ  
Eoss @ 400V  
100% UIS Tested  
100% Rg Tested  
For Halogen Free add "L" suffix to part number:  
AOT11S65L & AOB11S65L & AOTF11S65L  
Top View  
TO-263  
D2PAK  
TO-220  
TO-220F  
D
D
G
S
D
S
S
G
D
S
G
G
AOT11S65  
AOTF11S65  
AOB11S65  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOT11S65/AOB11S65  
AOTF11S65  
AOTF11S65L  
Units  
Drain-Source Voltage  
VDS  
650  
V
Gate-Source Voltage  
VGS  
±30  
11*  
8*  
V
A
TC=25°C  
11  
8
11*  
8*  
Continuous Drain  
Current  
ID  
TC=100°C  
Pulsed Drain Current C  
Avalanche Current C  
IDM  
IAR  
45  
2
A
Repetitive avalanche energy C  
Single pulsed avalanche energy G  
TC=25°C  
EAR  
EAS  
60  
120  
39  
mJ  
mJ  
W
198  
1.6  
31  
PD  
Power Dissipation B  
Derate above 25oC  
0.31  
100  
0.25  
W/ o  
C
MOSFET dv/dt ruggedness  
Peak diode recovery dv/dt H  
dv/dt  
V/ns  
°C  
20  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds J  
Thermal Characteristics  
TL  
300  
°C  
Parameter  
Symbol  
AOT11S65/AOB11S65  
AOTF11S65  
AOTF11S65L  
Units  
Maximum Junction-to-Ambient A,D  
RθJA  
65  
65  
65  
°C/W  
Maximum Case-to-sink A  
RθCS  
RθJC  
0.5  
--  
--  
4
°C/W  
°C/W  
Maximum Junction-to-Case  
0.63  
3.25  
* Drain current limited by maximum junction temperature.  
Rev1: Mar 2012  
www.aosmd.com  
Page 1 of 7  

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