AO9926BL

更新时间： 2024-09-12 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	120K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO9926BL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.81
Is Samacsys：	N	Base Number Matches：	1

AO9926BL 数据手册

AO9926B

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO9926B uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. This device is suitable

for use as a uni-directional or bi-directional load

switch. Standard Product AO9926B is Pb-free (meets

ROHS & Sony 259 specifications). AO9926BL is a

Green Product ordering option. AO9926B and

AO9926BL are electrically identical.

V_DS(V) = 20V

I_D= 7.6 A (V_GS= 10V)

R_DS(ON)< 23mΩ (V_GS= 10V)

R_DS(ON)< 26mΩ (V_GS= 4.5V)

R_DS(ON)< 34mΩ (V_GS= 2.5V)

R_DS(ON)< 52mΩ (V_GS= 1.8V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

7.6

T_A=25°C

T_A=70°C

I_D

6.1

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

110

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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