AOT12N65/AOTF12N65/AOB12N65
650V, 12A N-Channel MOSFET
General Description
Product Summary
VDS
750V@150℃
12A
The AOT12N65 & AOTF12N65 & AOB12N65 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
ID (at VGS=10V)
R
DS(ON) (at VGS=10V)
< 0.72Ω
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
100% UIS Tested
100% Rg Tested
Top View
D
TO-263
D2PAK
TO-220
TO-220F
D
S
S
G
D
S
D
G
G
G
S
AOT12N65
AOTF12N65
AOB12N65
Orderable Part Number
AOT12N65
Package Type
TO-220 Pb Free
TO-220F Pb Free
TO-220F Green
TO-263 Green
Form
Tube
Tube
Tube
Minimum Order Quantity
1000
1000
1000
800
AOTF12N65
AOTF12N65L
AOB12N65L
Tape & Reel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT(B)12N65 AOTF12N65 AOTF12N65L
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
650
±30
V
V
VGS
TC=25°C
12
12*
7.7*
48
12*
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
TC=100°C
7.7
7.7*
A
IDM
IAR
5
A
Repetitive avalanche energy C
Single plused avalanche energy G
EAR
EAS
375
750
mJ
mJ
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
30
5
dv/dt
V/ns
W
278
2.2
50
40
PD
Power Dissipation B
Derate above 25oC
W/ oC
°C
0.4
0.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
°C
Parameter
Symbol
RθJA
AOT(B)12N65 AOTF12N65 AOTF12N65L
Units
Maximum Junction-to-Ambient A,D
65
65
65
°C/W
Maximum Case-to-sink A
RθCS
0.5
--
--
°C/W
°C/W
Maximum Junction-to-Case
RθJC
0.45
2.5
3.1
* Drain current limited by maximum junction temperature.
Rev.7.0: December 2014
www.aosmd.com
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