是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 最大漏极电流 (Abs) (ID): | 7.6 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AO9926B_11 | AOS |
获取价格 |
20V Dual N-Channel MOSFET | |
AO9926BL | AOS |
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Dual N-Channel Enhancement Mode Field Effect Transistor | |
AO9926C | AOS |
获取价格 |
20V Dual N-Channel MOSFET | |
AO9926C | FREESCALE |
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20V Dual N-Channel MOSFET | |
AO9926E | AOS |
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Dual N-Channel Enhancement Mode Field Effect Transistor | |
AO9926EL | AOS |
获取价格 |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
AOA0000CE2 | PANASONIC |
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Precision Thick Film Chip Resistors | |
AOA400 | AOS |
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N-Channel Enhancement Mode Field Effect Transistor | |
AOA400L | AOS |
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N-Channel Enhancement Mode Field Effect Transistor | |
AOB10B60D | AOS |
获取价格 |
600V, 10A Alpha IGBT with Diode |