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AOB12N65L PDF预览

AOB12N65L

更新时间: 2024-09-13 01:21:55
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 385K
描述
650V, 12A N-Channel MOSFET

AOB12N65L 数据手册

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AOT12N65/AOTF12N65/AOB12N65  
650V, 12A N-Channel MOSFET  
General Description  
Product Summary  
VDS  
750V@150  
12A  
The AOT12N65 & AOTF12N65 & AOB12N65 have been  
fabricated using an advanced high voltage MOSFET  
process that is designed to deliver high levels of  
performance and robustness in popular AC-DC  
applications.  
ID (at VGS=10V)  
R
DS(ON) (at VGS=10V)  
< 0.72  
By providing low RDS(on), Ciss and Crss along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
100% UIS Tested  
100% Rg Tested  
Top View  
D
TO-263  
D2PAK  
TO-220  
TO-220F  
D
S
S
G
D
S
D
G
G
G
S
AOT12N65  
AOTF12N65  
AOB12N65  
Orderable Part Number  
AOT12N65  
Package Type  
TO-220 Pb Free  
TO-220F Pb Free  
TO-220F Green  
TO-263 Green  
Form  
Tube  
Tube  
Tube  
Minimum Order Quantity  
1000  
1000  
1000  
800  
AOTF12N65  
AOTF12N65L  
AOB12N65L  
Tape & Reel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOT(B)12N65 AOTF12N65 AOTF12N65L  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
650  
±30  
V
V
VGS  
TC=25°C  
12  
12*  
7.7*  
48  
12*  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
TC=100°C  
7.7  
7.7*  
A
IDM  
IAR  
5
A
Repetitive avalanche energy C  
Single plused avalanche energy G  
EAR  
EAS  
375  
750  
mJ  
mJ  
MOSFET dv/dt ruggedness  
Peak diode recovery dv/dt  
TC=25°C  
30  
5
dv/dt  
V/ns  
W
278  
2.2  
50  
40  
PD  
Power Dissipation B  
Derate above 25oC  
W/ oC  
°C  
0.4  
0.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
Thermal Characteristics  
TL  
300  
°C  
Parameter  
Symbol  
RθJA  
AOT(B)12N65 AOTF12N65 AOTF12N65L  
Units  
Maximum Junction-to-Ambient A,D  
65  
65  
65  
°C/W  
Maximum Case-to-sink A  
RθCS  
0.5  
--  
--  
°C/W  
°C/W  
Maximum Junction-to-Case  
RθJC  
0.45  
2.5  
3.1  
* Drain current limited by maximum junction temperature.  
Rev.7.0: December 2014  
www.aosmd.com  
Page 1 of 6  

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