Datasheet > AOB12N50

AOB12N50

更新时间： 2024-09-12 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	262K
描述
500V, 12A N-Channel MOSFET

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AOB12N50 数据手册

AOT12N50/AOB12N50/AOTF12N50

500V, 12A N-Channel MOSFET

General Description

Product Summary

V_DS

600V@150℃

12A

The AOT12N50 & AOB12N50 & AOTF12N50 have been

fabricated using an advanced high voltage MOSFET

process that is designed to deliver high levels of

performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.52Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT12N50L & AOTF12N50L & AOB12N50L

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT12N50

AOTF12N50

AOB12N50

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT12N50/AOB12N50

AOTF12N50

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

±30

T_C=25°C

12*

Continuous Drain

Current

I_D

T_C=100°C

8.4

8.4*

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy ^C

I_DM

5.5

454

I_AR

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

908

V/ns

W/ ^oC

250

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

-55 to 150

°C

300

°C

Parameter

Symbol

AOT12N50/AOB12N50

AOTF12N50

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

°C/W

Maximum Junction-to-Case

2.5

* Drain current limited by maximum junction temperature.

Rev7: Jul 2011

www.aosmd.com

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