Datasheet > AO8832

AO8832

更新时间： 2024-09-13 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	135K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AO8832 数据手册

AO8832

Common-Drain Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

Features

The AO8832 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V while

retaining a 12V V_GS(MAX)rating. It is ESD protected. This

device is suitable for use as a uni-directional or bi-

directional load switch, facilitated by its common-drain

configuration. Standard Product AO8832 is Pb-free

(meets ROHS & Sony 259 specifications).

V_DS(V) = 30V

I_D= 7A (V_GS= 10V)

R_DS(ON)< 24mΩ (V_GS= 10V)

R_DS(ON)< 28mΩ (V_GS= 4.5V)

R_DS(ON) < 31mΩ (V_GS= 3.6V)

R_DS(ON)< 39mΩ (V_GS= 2.5V)

TSSOP-8

Top View

1.6KΩ

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

T_A=25°C

T_A=70°C

I_D

5.5

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.5

P_D

Power Dissipation ^A

0.96

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

110

130

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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