Datasheet > AO8822_11

AO8822_11

更新时间： 2024-11-23 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	202K
描述
20V Common-Drain Dual N-Channel MOSFET

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AO8822_11 数据手册

AO8822

20V Common-Drain Dual N-Channel MOSFET

General Description

Product Summary

V_DS

20V

The AO8822 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 1.8V while retaining a 12V V_GS(MAX)

rating. This device is suitable for use as a uni-directional

or bi-directional load switch, facilitated by its common-

drain configuration.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

R_DS(ON)(at V_GS= 3.6V)

R_DS(ON)(at V_GS= 2.5V)

< 18mΩ

< 22mΩ

< 23mΩ

< 27mΩ

ESD Protected

TSSOP8

Top View

Bottom View

D1/D2

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±12

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

P_D

1.5

T_A=25°C

T_A=70°C

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

130

R_θJA

Steady-State

101

R_θJL

Rev 6 : March 2011

www.aosmd.com

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