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AO8822_11 PDF预览

AO8822_11

更新时间: 2024-09-13 12:24:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 202K
描述
20V Common-Drain Dual N-Channel MOSFET

AO8822_11 数据手册

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AO8822  
20V Common-Drain Dual N-Channel MOSFET  
General Description  
Product Summary  
VDS  
20V  
The AO8822 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 1.8V while retaining a 12V VGS(MAX)  
rating. This device is suitable for use as a uni-directional  
or bi-directional load switch, facilitated by its common-  
drain configuration.  
ID (at VGS=10V)  
7A  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 4.5V)  
RDS(ON) (at VGS = 3.6V)  
RDS(ON) (at VGS = 2.5V)  
< 18m  
< 22mΩ  
< 23mΩ  
< 27mΩ  
ESD Protected  
TSSOP8  
D
D
Top View  
Bottom View  
D1/D2  
S1  
D1/D2  
S2  
8
7
6
5
1
2
3
4
G
G
S1  
G1  
S2  
G2  
S
S
Pin 1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
20  
±12  
7
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
ID  
6
A
Pulsed Drain Current C  
IDM  
PD  
30  
1.5  
TA=25°C  
TA=70°C  
W
°C  
Power Dissipation B  
1
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
63  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
83  
130  
83  
RθJA  
Steady-State  
Steady-State  
101  
64  
RθJL  
Rev 6 : March 2011  
www.aosmd.com  
Page 1 of 5  

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