Datasheet > AO8820

AO8820

更新时间： 2024-10-30 12:51:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	241K
描述
20V Common-Drain Dual N-Channel Mosfet

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AO8820 数据手册

AO8820

20V Common-Drain Dual

N-Channel Mosfet

General Description

The AO8820 uses advanced trench technology to provide excellent R

_DS(ON), low gate charge and operation with gate

voltages as low as 1.8V while retaining a 12V V_GS(MAX)

as a uni-directional or bi-directional load switch,

rating. It is ESD protected. This device is suitabl

e for use

by its common-drain configuration.

facilitated

Features

V_DS

20V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

< 21mΩ

< 24mΩ

< 28mΩ

< 32mΩ

< 50mΩ

R_DS(ON)(at V_GS=3.6V)

R_DS(ON)(at V_GS=2.5V)

R_DS(ON)(at V_GS=1.8V)

ESD protected!

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±12

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

5.5

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

1.5

°C

Power Dissipation ^B

0.96

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

120

R_θJA

Steady-State

R_θJL

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与AO8820相关器件

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