Datasheet > AO8830

AO8830

更新时间： 2024-06-27 12:14:02

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	1055K
描述
TSSOP-8

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AO8830 数据手册

AO8830

DUAL N-CHANNEL ENHANCEMENT MODE FET

FEATURES

 Ultra low on-resistance:V_DS=20V,I_D=6A,R_DS(ON)≤27mΩ@V_GS=10V

 Low gate charge

 ESD protected

 Surface Mount device

TSSOP-8

MECHANICAL DATA



Case: TSSOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: not available

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

±12

Unit

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

4.8

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

1.5

Power dissipation

0.94

140

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V^(BR)DSS*

Min

Typ

Max

Unit

Conditions

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

V =0V, I =250μA

I_DSS

I_GSS

±10

μA V_DS=16V,

V^GS=0V

μA V_DS=0V,

VGS=±10V

mΩ

±12

0.5

V =0V, I =±250μA

Gate-threshold voltage

On-State Drain Current

V_GS(th)

I_D(ON)

0.6

V_DS=V_GS, I_D=1mA

V_DS=5V,

VGS=4.5V

V^GS=10V, I^D=6A

VGS=10V, ID=6A,TJ=125°C

V^GS=4.5V, I^D=5A

V^GS=3.1V, I^D=4A

VGS=2.5V, ID=4A

V^GS=1.8V, I^D=2A

V^DS=5V, I^D=6A

0.75

Drain-source on-resistance

R_DS(ON)*

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

2.5

IS=1A, VGS=0V

290

120

V_{DS=10V, VGS=0V, f=1MHz}

1.6

5.2

2.1

1.9

280

972

2.35

2.2

KΩ V_{DS=0V, V =0V, f=1MHz}

Q_g

VGS=4.5V,VDS=10V,ID=6A

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

μS

VGS=4.5V, VDS=10V,

RGEN=3Ω,RL=1.7Ω

t_rr

Q_rr

I =6A, dI/dt=100A/ s,VGS=-9V

I^F=6A, dI/dt=100A/ s,VGS=-9V

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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E-mail:hkt@heketai.com

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与AO8830相关器件

型号	品牌	获取价格	描述	数据表
AO8830_10	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8832	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8846	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO9435	HOTTECH	获取价格	SOP-8
AO9926	ALPHA	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO9926A	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO9926A	HOTTECH	获取价格	SOP-8
AO9926B	FREESCALE	获取价格	N-Channel 20-V (D-S) MOSFET Fast switching speed
AO9926B	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO9926B_11	AOS	获取价格	20V Dual N-Channel MOSFET

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