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AO8830 PDF预览

AO8830

更新时间: 2024-11-23 03:18:55
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 117K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8830 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:8.42

AO8830 数据手册

 浏览型号AO8830的Datasheet PDF文件第2页浏览型号AO8830的Datasheet PDF文件第3页浏览型号AO8830的Datasheet PDF文件第4页 
AO8830  
Common-Drain Dual N-Channel Enhancement Mode Field  
Effect Transistor  
General Description  
Features  
The AO8830 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V while  
retaining a 12V VGS(MAX) rating. It is ESD protected.  
This device is suitable for use as a uni-directional or  
bi-directional load switch, facilitated by its common-  
drain configuration. Standard Product AO8830 is Pb-  
free (meets ROHS & Sony 259 specifications).  
AO8830L is a Green Product ordering option.  
AO8830 and AO8830L are electrically identical.  
VDS (V) = 20V  
ID = 6 A (VGS = 10V)  
RDS(ON) < 27m(VGS = 10V)  
RDS(ON) < 30m(VGS = 4.5V)  
RDS(ON) < 41m(VGS = 2.5V)  
RDS(ON) < 55m(VGS = 1.8V)  
ESD Rating: 2000V HBM  
D2  
D1  
TSSOP-8  
Top View  
1.6K  
1.6KΩ  
1
2
3
4
8
7
6
5
D1/D2  
S1  
D1/D2  
S2  
S2  
G1  
G2  
S1  
G1  
G2  
S2  
S1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
6
V
A
TA=25°C  
TA=70°C  
ID  
4.8  
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
1.5  
PD  
W
Power Dissipation A  
0.94  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
64  
Max  
83  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
115  
70  
140  
85  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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