Datasheet > AO8820

AO8820

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	836K
描述
TSSOP-8

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中文翻译

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数据手册

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AO8820 数据手册

AO8820

DUAL N-CHANNEL ENHANCEMENT MODE FET

FEATURES

 Ultra low on-resistance:V_DS=20V,I_D=7A,R_DS(ON)≤21mΩ@V_GS=10V

 Low gate charge

 ESD protected

 Surface Mount device

TSSOP-8

MECHANICAL DATA



Case: TSSOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: not available

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

±12

Unit

VDS

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

5.5

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

1.5

Power dissipation

0.96

120

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V(BR)DSS*

Min

Typ

Max

Unit

Conditions

VGS=0V, ID=250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

I_DSS

I_GSS

±10

μA V_DS=16V,

μA V_DS=0V,

V^GS=±10V

VGS=0V

±12

0.5

mΩ

μS

VDS=0V, IG=±250μA

V_DS=V_GS, I_D=250μA

Gate-threshold voltage

On-State Drain Current

V_GS(th)

I_D(ON)

0.65

V_DS=5V,

V^GS=4.5V

VGS=10V, ID=7A

V^GS=10V, I^D=7A,T^J=125°C

^GS=4.5V, I^D=6.6A

16.5

23.1

Drain-source on-resistance

R_DS(ON)*

VGS=2.5V, ID=5.5A

V^GS=1.8V, I^D=2A

V^DS=5V, I^D=7A

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

0.75

2.5

615

150

120

0.9

8.5

1.2

IS=1A, VGS=0V

V_{DS=10V, VGS=0V, f=1MHz}

V_{DS=0V, V =0V, f=1MHz}

Q_g

VGS=4.5V,VDS=10V,ID=7A

Q_gs

Q_gd

t_d(on)

t_r

VGS=5V, VDS=10V,

Turn-on rise time

μS

t_d(off)

t_f

RGEN=3Ω,RL=1.4Ω

Turn-off delay time

Turn-off fall time

μS

t_rr

Q_rr

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I =7A, dI/dt=100A/ s

I^F=7A, dI/dt=100A/ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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E-mail:hkt@heketai.com

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与AO8820相关器件

型号	品牌	获取价格	描述	数据表
AO8820_12	AOS	获取价格	20V Common-Drain Dual N-Channel MOSFET
AO8820L	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8822	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field
AO8822	FREESCALE	获取价格	20V Common-Drain Dual N-Channel Mosfet
AO8822	HOTTECH	获取价格	TSSOP-8
AO8822_11	AOS	获取价格	20V Common-Drain Dual N-Channel MOSFET
AO8822L	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field
AO8830	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8830	FREESCALE	获取价格	Dual N-Channel Logical Level MOSFET
AO8830	HOTTECH	获取价格	TSSOP-8

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