Datasheet > AO8816

AO8816

更新时间： 2024-11-24 18:09:43

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	990K
描述
TSSOP-8

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中文翻译

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数据手册

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AO8816 数据手册

AO8816

DUAL N-CHANNEL ENHANCEMENT MODE FET

FEATURES

 Ultra low on-resistance:V_DS=30V,I_D=8A,R_DS(ON)≤15mΩ@V_GS=10V

 Low gate charge

 ESD protected

 Surface Mount device

TSSOP-8

MECHANICAL DATA



Case: TSSOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: not available

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

Unit

VDS

V_GS

±12

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

1.5

Power dissipation

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

T_J

T_STG

120

°C/W

°C

150

Storage temperature

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V(BR)DSS*

Min

Typ

Max

Unit

Conditions

VGS=0V, ID=250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

I_DSS

I_GSS

±10

1.4

μA V_DS=24V,

VGS=0V

μA V_DS=0V,

V^GS=±12V

mΩ

V_GS(th)

0.6

VDS=VGS, ID=250μA

V_DS=5V,

VGS=4.5V

VGS=10V, ID=8A

VGS=10V, ID=8A,TJ=125°C

V^GS=4.5V, I^D=5A

VGS=2.5V, ID=4A

VDS=5V, ID=8A

On-State Drain Current

I_D(ON)

12.2

17.6

0.73

Drain-source on-resistance

R_DS(ON)*

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

2.5

IS=1A, VGS=0V

1130

170

125

1.5

V_{DS=15V, VGS=0V, f=1MHz}

KΩ V_{DS=0V, VGS=0V, f=1MHz}

Total gate charge

Q_g

V^GS=4.5V,V^DS=15V,I^D=8A

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

1.65

5.5

5.7

4.8

VGS=5V, VDS=15V,

RGEN=3Ω,RL=1.8Ω

t_rr

Q_rr

IF=8A, dI/dt=100A/ s

1 / 5

E-mail:hkt@heketai.com

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中文翻译

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与AO8816相关器件

型号	品牌	获取价格	描述	数据表
AO8816L	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8818	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8818	HOTTECH	获取价格	TSSOP-8
AO8818_08	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8818L	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8820	FREESCALE	获取价格	20V Common-Drain Dual N-Channel Mosfet
AO8820	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8820	HOTTECH	获取价格	TSSOP-8
AO8820_12	AOS	获取价格	20V Common-Drain Dual N-Channel MOSFET
AO8820L	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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