Datasheet > AO8816L

AO8816L

更新时间： 2024-11-23 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	109K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AO8816L 数据手册

AO8816

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Features

The AO8816 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO8816 is Pb-free

(meets ROHS & Sony 259 specifications). AO8816L

is a Green Product ordering option. AO8816 and

AO8816L are electrically identical.

V_DS(V) = 30V

I_D= 8 A (V_GS= 10V)

R_DS(ON)< 15mΩ (V_GS= 10V)

R_DS(ON)< 17mΩ (V_GS= 4.5)

R_DS(ON)< 23mΩ (V_GS= 2.5V)

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

T_A=25°C

T_A=70°C

I_D

Pulsed Drain Current ^B

I_DM

1.5

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

120

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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