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AO8818 PDF预览

AO8818

更新时间: 2024-11-23 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 149K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8818 数据手册

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AO8818  
Common-Drain Dual N-Channel Enhancement Mode Field Effect  
Transistor  
General Description  
Features  
The AO8818 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V while  
retaining a 12V VGS(MAX) rating. It is ESD protected. This  
device is suitable for use as a uni-directional or bi-  
directional load switch, facilitated by its common-drain  
configuration. Standard Product AO8818 is Pb-free  
(meets ROHS & Sony 259 specifications). AO8818L is  
a Green Product ordering option. AO8818 and  
AO8818L are electrically identical.  
VDS (V) = 30V  
ID = 7A (VGS = 10V)  
RDS(ON) < 18m(VGS = 10V)  
RDS(ON) < 20m(VGS = 4.5V)  
RDS(ON) < 27m(VGS = 2.5V)  
ESD Rating: 1500V HBM  
D1  
D2  
TSSOP-8  
Top View  
1
2
3
4
8
7
6
5
D1/D2  
S1  
D1/D2  
S2  
S2  
G1  
G2  
S1  
G1  
G2  
S2  
S1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
7
V
A
TA=25°C  
TA=70°C  
ID  
5.5  
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
1.5  
PD  
W
Power Dissipation A  
0.96  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
64  
Max  
83  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
RθJL  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
89  
120  
70  
Steady-State  
Steady-State  
53  
Alpha & Omega Semiconductor, Ltd.  

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